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Meeting the challenge of integrating III-Vs with deep submicron silicon

High-mobility devices based on indium gallium arsenide (InGaAs) channels could benefit the performance of mainstream silicon integrated circuits. Researchers are working to meet the challenges of bringing the different device traditions together. Mike Cooke reports on contributions at December’s IEEE International Electron Devices Meeting (IEDM) in Washington DC.

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Peregrine challenging GaAs power amplifier market with UltraCMOS Global 1

Performance achieved without envelope tracking or other enhancements.

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Improving nanowire transistor linearity with regrowth

Third intercept point values "significant improvement over those achieved from other approaches".

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Enhancing SiC epitaxy with high-speed rotation

By spinning 150mm wafers at 1000rpm, growth rate has been boosted to 50μm/hour while also improving doping uniformity.

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Embedded Schottky diode for unidirection GaN HFET

Korean researchers have developed a device that demonstrates both forward and reverse breakdown drain voltages greater than 600V.

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Increasing fMAX for InP/GaInAsSb transistors

ETH-Zurich fabricates GaInAsSb DHBTs with record fMAX of 636GHz

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New 'universal' method for transparent conduction on nitride semiconductors

Transparency of 95% has been maintained in some candidate materials to a deep ultraviolet wavelength of 250nm.

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Gallium nitride quantum dots and deep UV light emission

University of Notre Dame produces LEDs with wavelengths as short as 243nm.

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PLD/MBE m-plane gallium nitride on lithium gallate

An InGaN/GaN MQW structure on a GaN/LiGaO2 buffer gives photoluminescence performance comparable to commercially available LEDs and semi-polar LEDs.

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Caltech develops highcoherence laser based on integral high-Q resonators in hybrid Si/III-V platform

Single-mode high-Q silicon resonator yields spectral linewidth of 18kHz in telecom band.

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Wide-bandgap materials and power applications

Efforts continue to realize the potential of wide-bandgap semiconductors for power switching applications. Researchers presented a number of papers at December’s International Electron Devices Meeting (IEDM) in Washington DC.

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White light-emitting diodes from selective area epitaxy GaN nanopyramids

Phosphor-free devices have been fabricated that emit light across the 400–600nm wavelength range.

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Thinning nitride LED substrate for increased green emission efficiency

Wall-plug efficiency (WPE) has been increased from 11.5% to 17.1% by thinning the substrate from 200μm to 80μm.

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MOCVD surface roughening for photon absorption boost in InGaN solar cell

UCSB shows how surface roughening of a nitride photovoltaic cell improves both external quantum efficiency and short-circuit current.

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InP nanowire solar cells with improved shortwavelength response

Internal quantum efficiency beats planar InP photovoltaic cell record holder in the 300–570nm wavelength range.

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Golden path to improved contact between graphene and gallium nitride

Near-ultraviolet light-emitting diode brightness has been increased by 10% by using a graphene on gold nanocluster electrode.

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Evanescent wave coupling to increase light extraction efficiency

Light output power has been increased by factor of 3.8 in red LEDs.

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Vertical spacers for tighter integration of III-V MOSFETs

UCSB has demonstrated a device with the highest peak transconductance for any III-V MOSFET to date.

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Veeco develops fully integrated MBE system for R&D applications

Gerry Blumenstock of Veeco’s MBE business unit discusses how the firm’s latest molecular beam epitaxy deposition system has been developed, while professor Michael Santos explains its tailoring for research in his III-V MBE Group at University of Oklahoma.

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Semipolar nitride laser diodes without AlGaN cladding

Light output power of 2.15W achieved in pulsed operation.

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Low-resistivity n-type aluminium gallium nitride for more efficient LEDs

Researchers in Japan have increased the wall-plug efficiency of a 390nm violet-emitting device by 15%.

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Limited area epitaxy applied to semipolar GaN laser diodes

Effects of misfit dislocations avoided, allowing true green laser diodes with a wavelength 523nm.

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Hole conductivity in zinc sulfide telluride and blue-green light emission

Results suggest that a pn junction is formed between nitrogen-doped ZnSTe and chlorine-doped ZnS, creating a blue-green LED structure.

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GaN-on-Si opportunity for extending the life of CMOS silicon fabs?

Announcements of gallium nitride light-emitting diode samples produced on silicon in 150mm and 200mm facilities gives hope for others. Mike Cooke reports on the cost-reducing potential and obstacles faced by the industry.

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First small-signal data from p-channel gallium nitride transistor

Gallium nitride could open up complementary logic for applications in harsher environments and higher temperatures.

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Electrostatic protection for gallium nitride circuits

ESD pHEMT clamp needed for high-frequency and high-power use.

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Cadmium selenide quantum dot layer boost for three-junction solar cells

Wavelength conversion of high-energy ultraviolet photons has been shown to increase triple-junction solar cell power efficiency by 10%.

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White light from near-UV and blue laser diodes and phosphors

Researchers at UCSB seek ways to avoid efficiency droop in high-brightness devices.

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Thinning gallium nitride barriers for more efficient photovoltaic conversion

Structures with up to 50 InGaN quantum wells produced on sapphire and bulk GaN.

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Palladium oxide interlayer cuts gate leakage in nitride HEMTs

On/off current ratio increased three orders of magnitude, subthreshold swing halved.

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MMICs: state of the industry in 2013 and future prospects

Engalco Research gives an overview of monolithic microwave integrated circuits of various types, and the main players and trends in the sector.

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LED applications to be key drivers for bulk GaN market

No bulk GaN substrate to penetrate power device market unless price of $1500 per 4” wafer can be reached, forecasts Yole.

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Lateral current thinking improves light and voltage in nitride LEDs

Superlattices introduced on n-side of LED increase output power by 13.7% and reduce input power by 6.7%.

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High-frequency nitride HEMTs on silicon with high breakdown

Highest breakdown cut-off product for 0.3μm T-gate conventional SiN passivated transistors without field plates.

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Fujitsu develops InP HEMTbased receiver chip with sensitivity boosted tenfold

Light output power from a 380nm UV LED has been increased by 166% at drive current of 20mA.

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Extending effectiveness of transparent conductive oxide into ultraviolet

Light output power from a 380nm UV LED has been increased by 166% at drive current of 20mA.

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Emergence of low-price LEDs pushing adoption for general lighting

...but cost reduction is changing industry structure and pushing M&A.

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Diamond materials for semiconductors to grow to $43m market in 2020, driven by passive devices

Access to high-quality material key for device development, says Yole.

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Developing market for normally-off nitride power electronics

With Japanese companies sampling normally-off gallium nitride transistors, Mike Cooke looks at some recent research towards improved performance.

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Tunneling to avoid efficiency droop in nitride semiconductor LEDs

Ohio State University shows how a tunnel junction with low resistivity could be used to cascade optoelectronic devices.

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Semiconductor growth time reduced from typical 7 hours to just 3 hours

Indium tin oxide has been used as part of the upper cladding layer to reduce thermal damage in blue/green III-nitride lasers.

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Room-temperature indium antimonide mid-infrared photodiode

Potential applications include human body detection for power savings.

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Optimizing spherical cap patterned sapphire for nitride semiconductor LEDs

Enhancement in light intensity of 15% achieved over LEDs produced on commercial substrate.

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Increasing output power from nitride LEDs with p-InGaN contacts

China’s Jimei University has increased light output power by 45% over a reference device.

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Growth switching for higher-efficiency near-green indium gallium nitride LEDs

Devices produced with peak external quantum efficiency of 48.6% at ~520nm wavelength.

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Doped barriers reduce polarization and droop effects in blue-green LEDs

Luminous efficiency at 350mA drive current is reduced by just 12.4% rather than the 19.9% of a reference device.

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Copper with titanium nitride offers alternative GaN HEMT gate stack

New structure demonstrates good electrical, thermal and reliability performance against nickel/gold gates.

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Bridging the amber-green gap and white LEDs

Mike Cooke reports on recent reports of various techniques to create light-emitting diodes that could fill the chasm, possibly leading to whiter LEDs.

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Azzurro boosts nitride LED on silicon uniformity with strain engineering

Electroluminescence wavelength and intensity variations among the lowest reported to date.

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Quantum dot lasers on silicon with stable operation at high temperature

Devices emitting at 1.3μm show infinite characteristic temperature around room temperature and 150K around 100°C.

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Pre-straining for reduced quantum-confined Stark effect in blue laser diode material

Peking University has reduced the blue-shift over the 5–50mA range from 23meV to 1meV by using pre-strained material.

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Increased maximum oscillation for ETH doubleheterostructure transistor

ETH-Zurich has reported a record maximum oscillation frequency fMAX of 621GHz for any InP/GaAsSb device.

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Grading barriers for improved hole distribution in nitride LEDs

A structure with varying-thickness GaN barriers between InGaN MQWs outperforms equal-thickness barriers at high injection current.

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Gold-free CMOS-compatible nitride semiconductor Schottky barrier diodes

Gate-edge termination and recessing used to reduce reverse leakage by more than three orders of magnitude.

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GaN-based HEMT improvement using advanced structures

Giuseppe Vacca gives an overview of the benefits obtainable from innovative gallium nitride transistor architectures.

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Exploring graded electron-blocking layers for nitride LEDs

Efficiency droop at 100mA reduced to 7.8%, compared with 9.7% for bulk electronblocking layers.

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Explaining high electron leakage over electron-blocking layers in nitride LEDs

Researchers see unequivocal correlation between onset of high injection and efficiency droop.

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Digital etch recess achieves highest current for e-mode GaN MISHFET on silicon

Maximum drain current of 1.35A/mm in transistor with 2.1nm barrier.

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Competing for solar energy records and applications

Until recently compound semiconductor photovoltaic energy conversion has been restricted by cost to space vehicles, where the higher efficiencies lead to lighter panels. Mike Cooke reports on new developments that may lead to terrestrial applications.

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Straining barriers towards low-noise high-breakdown pHEMTs

New design gives 99% less gate leakage and 73% higher breakdown.

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Self-terminating recess etch produces nitride transistor with +3V threshold

An AlGaN normally-off MOSFET device has been fabricated with maximum drain current of more than 200mA/mm.

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Nanosphere-patterned sapphire improves deep UV LED performance

Light output power almost doubled and external quantum efficiency reaches 3.45% at an injection current of 20mA.

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LED equipment spending to rebound in 2014

China to rise from 33% of spending in 2013 to 44% in 2014 as MOCVD reactor sales rise nearly 50%, says SEMI.

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Laser sculpting increases nitride LED extraction by up to 46%

Researchers in China have used a truncated pyramid structure to reduce back-reflection at the LED’s air interface.

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First 40GHz results for quaternary nitride semiconductor HEMTs

Epitaxial material has demonstrated the highest ever mobility for indium-containing GaN-based high-electron-mobility transistors.

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Exploring graphene applications in nitride semiconductor devices

Researchers are working hard to find commercial uses for graphene in existing and future devices

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Combining Al2O3 and SiO2 for nitride semiconductor LED passivation

Patterning of a silicon dioxide/aluminium oxide passivation layer has improved LED light output power by more than 20% at 60mA.

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Silicon nitride gate insulation and passivation reduces current collapse

The maximum drain current and breakdown voltages have also been increased in nitride high-electron-mobility transistors.

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Market focus: SiC microelectronics

SiC power device market grows at 38% year-on-year, despite 2012’s overall power electronics downturn Market reshaping as silicon device makers enter sector

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Overgrowth and surface plasmons for ultraviolet LEDs made on silicon wafers

Northwestern University has achieved peak output power of 1.2mW at wavelengths around 346nm.

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Longer-wavelength-lasing metamorphic InAs quantum wells on InP diodes

Researchers in Shanghai have extended the dominant mode of InP-based antimony-free interband laser diodes to 2.7μm at 77K.

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Improving the dynamic performance of nitride HEMTs

Researchers in China have improved the falling delay time by 55% and dynamic on-resistance by 17% by applying a 30V bias to the top-gate.

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First yellow LEDs from nitride semiconductor MQWs on silicon substrate

Silicon dioxide nanorods have been used to improve material quality from lateral overgrowth.

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First polariton laser with electrical pumping

Researchers claim an important step towards practical implementation of polaritonic light sources and electrically injected condensates.

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Exploring CMOS power amplification for mobile phones

Qualcomm has announced a CMOS radio-frequency front-end solution for mobile phones, including a CMOS power amplifier. How close is silicon to compound semiconductors for this application?

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China’s first diamond MESFET with gigahertz frequency performance

Cut-off frequency and maximum oscillation frequency reach 1.7GHz and 2.5GHz, respectively; shorter gate lengths promise improvement.

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Thermal anneal for improving adhesion of gold-doped graphene to nitride LEDs

Light output power from a near-UV LED has been increased by 34% over a device with bare multi-layer graphene.

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Strain engineering improves light output from green LEDs

Research in China shows how a shallow quantum well step boosts optical output power in green LEDs by 28.9% at a current of 150mA.

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Report analyses how best to make progress with HCPV

How can III-V cells compete with cheap crystalline silicon PV?

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Putting coats on ZnO nanorods for improved light extraction from GaN LEDs

The graded-refractive-index effect has been improved by coating zinc oxide nanorods with silicon dioxide.

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NCSU develops new technique for atomic-layer thin-film growth

Self-limiting growth of wafer-scale monolayer MoS2 promises large-scale application to FETs, LEDs.

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MIT & Brookhaven show that In-rich clustering does not drive efficiency in InGaN LEDs

Aberration-corrected STEM plus EELS enables non-destructive analysis of LED function.

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Lowering tunneling resistance in GaN/InGaN/GaN structures

Polarization engineering has yielded the lowest ever reported specific resistivity of 1.2x10–4Ω-cm2.

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High power-gain cut-off frequency with high breakdown in GaN-on-Si HEMT

France’s IEMN has reported a GaN-on-Si HEMT with performance “well beyond any previously reported data for GaN-on-Si devices”.

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Fraunhofer demos AlGaNbased sensors for continuous monitoring of UV exposure

The next stage is to optimize crystal growth and obtain more sharply defined wavelength limits.

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EU-supported €11.8m NEWLED project to ‘revolutionize’ LED lighting

European R&D is to boost the efficiency of yellow InGaAlP/AlGaAs LEDs for monolithic and hybrid white lighting by using bandgap-engineered superlattices.

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Atomic-layer prospects for compound semi devices

Researchers are seeking to use ALD advantages such as uniformity to enable better performance.

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Arizona State University demos room-temperature electrically powered nanolasers

Operating temperature has been raised by adjusting the SiN insulating layer thickness in sub-wavelength metallic-cavity laser.

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UV LED market to grow at 43% CAGR from $45m in 2012 to nearly $270m by 2017

New applications could add $30m to UV lamp replacement market, says Yole Développement.

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UCSB and École Polytechnique identify Auger recombination as cause of nitride LED efficiency droop

Auger electrons from InGaN/GaN LED correlate with droop current

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Textured ZnO improves III-V on germanium solar cell performance

Aerotaxy process cuts cost and complexity of producing nanowires for photovoltaics, LED bulbs etc

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Sol Voltaics unveils SolInk nanomaterial to boost PV module performance by 25%

Aerotaxy process cuts cost and complexity of producing nanowires for photovoltaics, LED bulbs etc

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Market focus: CMOS vs GaAs power amplifiers

Qualcomm’s CMOS PA throws market into flux & GaAs device revenue grew 2% to record $5.3bn in 2012

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New orientation for GaN-on-silicon transistors

Researchers in France show how the use of (110) silicon can form a better base for combining GaN and Si electronics.

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Laser-processed sapphire allows increased thickness of HVPE gallium nitride

Layers up to 200μm have been grown by hydride vapor phase epitaxy with threading dislocation density down to 1x107/cm2.

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GaN FinFET without heterostructure

A junctionless, heterostructure-free device with a gate length of 1μm has achieved near-ideal subthreshold swing for a GaN MISFET.

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Direct growth of indium-rich InGaN on silicon

High-indium-content material has been produced with an ohmic contact between the nitride layer and the silicon substrate.

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Diode embedding in nitride transistor to reduce parasitic inductance

A nitride transistor with an embedded Schottky barrier diode shows promise for monolithic high-efficiency energy converters and inverters.

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CMOS-based front-end targets single, global 4G LTE design for mobile devices

In February, Qualcomm Technologies Inc (a subsidiary of fabless chip manufacturer Qualcomm Inc of San Diego, CA, USA) introduced the RF360 front-end solution, a system-level solution addressing cellular radio-frequency band fragmentation and enabling for the first time, it is claimed, a single, global 4G LTE design for mobile devices...

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Bringing photoelectrochemistry and catalysis to bear on GaN planarization

RMS roughness reduced to 0.3nm, promising low-defect GaN growth.

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ALE boosts surface-channel GaAs transistor drive

The maximum drain current in GaAs NMOSFETs has been raised to a record 336mA/mm.

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Air-bridge to improve field-plate performance for nitride HEMTs

Breakdown voltage increased from 125V to 375V and stability at raised temperature improved compared with conventional design with source field-plate.

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RF switching from nitride semiconductor varactor technology

Insertion loss of about 1.2dB compares favorably with 1.5dB/2dB for HFET and ferrite-based varactor designs.

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New atomic layer deposition process for nitride LED reflector structures

Light output power has been increased by 43% by using an aluminium mirror and titanium dioxide/aluminium oxide distributed Bragg reflector combination.

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Moving forward from 44% to 50% conversion for III-V solar cells

Simulations propose structures that could reach even higher performance for multi-junction devices.

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High-frequency InAs quantum well transistors for future system on chip and RF

Researchers in the USA have achieved the best combination of cut-off frequency and maximum oscillation frequency ever reported for any III–V MOSFET technology.

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Gated anode AlGaN/GaN Schottky barrier diode enables increased forward current

Breakdown voltage not affected, while the turn-on voltage is lowered.

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First lateral insulated-gate bipolar transistors in 4H silicon carbide

What is claimed to be the first 4H-SiC lateral n-channel IGBT demonstrates lower differential on-resistance than a SiC MOSFET.

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Etch stop structure opens up gate recess improvement for GaN MISFET

MIT has achieved a maximum effective mobility of 1131cm2 /V-s, significantly better than other reported results.

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Double-gate HEMT explores current collapse in nitride devices

Gate field-plates are more effective than source field-plates, a study by China’s SINANO concludes.

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Balanced record for InAlGaN high-electron-mobility transistor

Notre Dame and IQE use InAlGaN barrier layers to achieve fT and fmax cut-off frequencies of 230GHz and 300GHz for a GaN HEMT.

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Air-channels and nanoporous structure boost output from nitride LEDs

Researchers in Taiwan have increased the light output power of nitride LEDs by 1.75x over standard devices due to improved light scattering.

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Distributed Bragg reflection in epitaxial nitride layers

Yale researchers have developed DBR mirrors for nitride VCSELs with reflectivity of more than 98%, 3–5x that of other epitaxial approaches.

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Hafnium dioxide for gate insulation and surface passivation in nitride HEMTs

An on/off current ratio of ten orders of magnitude and a breakdown voltage of 1524V have been achieved using HfO2 in AlGaN MOSHEMTs.

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InGaN-channel HEMT cut-off reaches 260GHz

As well as a cut-off frequency of 260GHz, researchers at Notre Dame and Kopin also achieve a maximum oscillation frequency of 220GHz.

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Nanocolumns support monolithic multi-wavelength emission

Orange and green nitride LEDs have been produced in a single growth process for the first time, claims Japan’s Sophia University.

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Polystyrene nanospheres focus effort on photonic crystal for nitride LED

Silicon dioxide or air-voids in the p-type GaN contact layer of nitride LEDs have enhanced light output power by up to 84%.

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Reducing gallium nitride growth temperature to 500°C

The pre-deposition of a thin layer of indium can improve the quality of GaN, and may help to extend nitride applications to solar cells.

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Self-textured oxide mask enhances UV LED external quantum efficiency by 83%

Researchers in Taiwan show how using an STOM template reduces threading dislocations and improves light extraction for UV LEDs.

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Silicon carbide epitaxy for growing market

A move to 6-inch substrates and emerging markets is driving expansion for SiC. Mike Cooke reports.

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Step towards integrating GaN HEMTs and CMOS

Singapore researchers have used a gold-free metallization scheme with low contact resistance to claim the first DC and microwave measurements of sub-micron-gate AlGaN/GaN HEMTs on silicon.

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Bifunctional quantum cascade laser/detector

Vienna University of Technology has used a narrow InGaAs well to align the emission and detection wavelengths of a quantum cascade structure.

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Diffuse reflection through zinc oxide nanorods boosts LED light extraction

Researchers in Taiwan have boosted light output by 57% over conventional nitride LEDs using ZnO nanorods and an aluminium reflector.

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Dry etching of InP-based materials using a highdensity ICP plasma system

Ligang Deng of Oxford Instruments Plasma Technology outlines how inductively coupled plasma technology can provide fast, accurate, low-damage etching of indium phosphide materials.

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First 268nm DUV LEDs on AlN substrate

Continuous-wave output power of 28mW and external quantum efficiency of 2.4% have been achieved at a drive current of 250mA.

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First InGaAs n-MOSFETs on germanium-on-insulator

Singapore researchers have achieved InGaAs-channel n-type MOSFETs on GeOI substrates with performance comparable to those on InP.

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Gold-doped graphene for transparent and current spreading electrodes in UV LEDs

Transparent and current-spreading gold-doped graphene electrodes show a 20% enhancement over ITO with comparable forward voltage.

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Monolithic InAs on silicon with high electron mobility

A French–German team has optimized the growth of a gallium antimonide buffer to avoid anti-phase domains in high-mobility indium arsenide channels on silicon substrates.

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Renewed enthusiasm for high-mobility channel development

Mike Cooke reports on presentations on high-mobility III-V and Ge-channel devices at December’s International Electron Devices Meeting in San Francisco.

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Silicon carbide steps to wider bandgaps in graphene

X-ray measurements have revealed an energy gap of more than 0.5eV in graphene nanoribbons via growth along steps in the SiC substrate.

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Reducing nitride LED droop with AlInN superlattice electron blocking

UCSB has achieved peak power comparable with LEDs that use an AlGaN electron-blocking layer, but with efficiency droop almost halved.

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Quaternary electron emitter injection improves nitride LED performance

An electron-emitting layer using lattice-matched AlInGaN barriers has been used to reduce current droop while maintaining peak efficiency.

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Powering up with silicon carbide

Silicon carbide promises power devices with superior performance, but can it deliver commercial product at the right price? Mike Cooke reports.

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One-step GaN on sapphire through graphene coating

Researchers in Korea achieve internal quantum efficiency of overgrown MQWs comparable to those on conventional two-step templates.

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Low noise and low power consumption with pseudomorphic HEMTs

Maximum drain current of over 2A/mm achieved at drain bias of 0.6V.

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In-situ silane treatment enhances light output from nitride LEDs

Maximum drain current of over 2A/mm achieved at drain bias of 0.6V.

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Growing high-mobility transistors directly on silicon

Maximum drain current of over 2A/mm achieved at drain bias of 0.6V.

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First submicron AlGaN/GaN HEMTs on 8-inch silicon

Results show feasibility of device-quality structures with greater economy of scale.

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Advances in ammonia purification

SAES Pure Gas outlines the role of improved ammonia gas purification systems in eliminating impurities and variability from nitride LED manufacturing, hence improving LED characteristics.

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Tuning micro-pillars to increase light extraction from nitride LEDs

Up to 100% increase in output seen without impacting electrical performance.

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Thermal droop improved in semi-polar nitride LEDs

UCSB reports characteristic temperature of almost 900K for (2021)-oriented semi-polar nitride LED.

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Osram Opto achieves cyan nitride semiconductor superluminescent LED

InGaN device outputs more than 4mW of 500nm-wavelength light, promising application to projectors.

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Lithium aluminate substrate for low-cost nonpolar gallium nitride

A new study clarifies the nitridation process used to create the nucleation layer, reports Mike Cooke.

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Improving nitride LEDs with ZnO nanorods on rear surface

Simple low-temperature solution-based process increases output power by up to 15%.

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First nonpolar nitride semiconductor VCSELs

…and first observation of polarization locking in GaN VCSELs, reports University of California, Santa Barbara.

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First ammonia MBE nitride HEMTs on silicon

Singapore researchers achieve drastic reduction in buffer leakage and increase in on/off ratio compared with plasma-assisted MBE.

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Diamond field-effect transistor with 50nm gate increases cut-off performance

RF performance in diamond field-effect transistors has been demonstrated for the first time at short gate-length.

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Arsenide nanowires on graphite and graphene

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Wafer-scale transfer of III-Vs to silicon preparing for low-cost manufacturing

Potential for application to heat-assisted magnetic recording and optical interconnect technologies.

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TU Darmstadt develops 1.5μm VCSEL with record 100nm bandwidth, plus first tunable 2μm laser

Use of flexible membrane targets fiber-optic telecommunications and gas detection applications.

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Reducing noise at high frequency in nitride-on-silicon transistors

France’s IEMN reports transistors promising cost-effective ultra-robust low-noise amplifiers for next-generation communication networks.

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Microdome p-GaN surface boosts nitride PV

Taiwan team develops simple, mechanically robust process to create surface texturing.

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Improving transport, reducing polarization in nitride LEDs

Mike Cooke reports on research aiming to increase LED efficiency for LCD and general lighting applications.

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Hamamatsu reports recordpower- density VCSEL

First demonstration of 10-watt-class VCSEL with implant isolation.

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Graphene-SiC transistor shows way to new ICs

Prototype produces both normally-on and normally-off behavior with on/off ratio up to 12,000 at room temperature.

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GaN-on-Si large-signal performance beyond 40GHz

Maximum output power density of 2W/mm with power-added efficiency up to 18.5%.

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Enhancing compound semiconductor nanowire transistors on silicon

Devices provide route to next-generation field-effect transistors.

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Deep UV LEDs with record external quantum efficiency

External quantum efficiency for 278nm deep ultraviolet light-emitting diode exceeds 10% at a CW injection current of 20mA.

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Ballistic deflection with improved transconductance using aluminium oxide

Ballistic deflection transistors integrate high-k dielectric for first time.

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Transferring graphene to nitride optoelectronics

Researchers are keen to find practical applications for graphene. In the past year or so, scientists and engineers have been looking at the material’s possible use in combination with nitride semiconductor optoelectronic devices such as LEDs and solar cells. Mike Cooke reports recent developments.

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Templates: the fast track to GaN-on-Si LEDs

By using templates, costly development can be avoided and the advantages of GaN-on-Si can be easily exploited with extremely short design-in cycles, says Erwin Ysewijn of AZZURRO Semiconductors.

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Nitride LED transfer from silicon to copper boosts output by 122%

Improvements have been made due to growth substrate removal, strain relaxation, insertion of a mirror, elimination of electrode-shading, and AlN surface roughening.

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Teflon and III-V double heterostructure transistors

Researchers at ETH Zurich show how interlayer dielectric can give performance close to that of air-bridges.

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Record 370GHz cut-off for InAlN barrier on GaN HEMT

Dielectric-free passivation, rectangular gates and re-grown contacts are shown to reduce the effects of parasitic resistance and capacitance.

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Normally-off nitride transistors on silicon with record current and transconductance

Hong Kong researchers achieve maximum drain current of 860mA/mm and peak transconductance of 509mS/mm.

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Hybrid ohmic-Schottky drain for higher breakdown in nitride HEMTs on silicon

Researchers in Taiwan achieve a 65% increase in breakdown voltage without significantly increased on-resistance.

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Gold-free nitride MOS-HEMTs for CMOS compatibility

Singapore and Hong Kong scientists have achieved record breakdown voltage for nitride MOS-HEMTs made using a gold-free process.

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First 40GHz 2.5W/mm output performance of GaN/Si HEMTs

IEMN demonstrates viable technology for cost-effective high-power millimeter-wave amplifiers fully compatible with silicon devices.

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Copper wiring for nitride semiconductor HEMTs

Scientists in Taiwan show how GaN HEMTs using copper interconnects with comparable performance to gold promises lower costs.

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Boron nitride release transfer of nitride LEDs from sapphire to adhesive tape

By using a hexagonal boron nitride buffer layer to release nitride LEDs from sapphire, NTT has produced vertical LED prototype that are less than 0.1mm thick.

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Vertical-stand surface-roughened nitride LEDs with 118.5% increased output

Benefits seen from side mounting and self-assembled conical arrays on free-standing GaN.

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Upwardly mobile III-V and Ge-based transistors

Researchers from around the world reported progress in enhancing transistor performance through semiconductor material engineering at the 2012 IEEE Symposium on VLSI Technology in Hawaii. Mike Cooke reports.

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Selective area growth recessing for improved normally-on nitride HFETs

Researchers in China have achieved a maximum current of 300mA/mm compared with 64mA/mm for an etched device.

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Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET

UCSB has achieved maximum drain current density of 2.77A/mm in a gate-first self-aligned MIS-HFET device using N-polar nitride material.

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Plasma oxidation of aluminium for insulated nitride transistor gates

RWTH Aachen and Aixtron have developed a process that allows devices with subthreshold behavior near the theoretical limit.

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Nanoporous gallium nitride for vertical LED lift-off

Yale University researchers have used an electrochemical etch to create a nanoporous GaN/sapphire template for vertical current-flow LEDs.

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Market for RF filters/duplexers, PAs and antenna switches to reach $4.7bn in 2016

SOI antenna switches are winning market share over GaAs, says market research firm Yole Développement.

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High-temperature solar-blind AlGaN photodetectors

Researchers in China produce devices with femtoamp dark-current and four-decade solar rejection.

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Electrical efficiency and current crowding in vertical InGaN/SiC LEDs

Series resistance accounts for 25% of power loss at high current, according to Ukraine-based group.

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Annealing RIE damage to improve InGaAs QWFET performance

MIT presents a novel self-aligned gate-last InGaAs quantum well MOSFET process with a view to manufacturability.

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AlGaN buffers on semipolar gallium nitride offer route to ultraviolet laser diodes

UCSB demonstrates electrically injected devices lasing at 384nm.

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Magnesium puzzle solving in nitride semiconductors

UCSB theorists untangle p-type dopant effects in gallium and other nitrides.

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Integrating multispectral capability into III-V detectors

Mike Cooke reports on some recent developments in creating multi-band photodetection for more compact, lighter equipment.

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InGaAsSbN solar cells grown by MOCVD

A quinternary layer has been developed for the 1eV component of GaAs-based multi-junction photovoltaics.

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Improving InGaN channel for HEMT power amp/switching

Record mobility of 1290cm2/V-s achieved for In0.05Ga0.95N channel.

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First strained gallium nitride quantum well transistor with AlN barriers

Researchers at the University of Notre Dame have demonstrated the opportunities for scaling enhancement-mode/normally-off devices.

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Crack-free nitride semi distributed Bragg reflectors

Peak reflectivity of 97.5% achieved at 400nm for 30-pair AlN/GaN distributed Bragg reflector on AlN templates.

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Reversing polarization to tackle overshoot and droop

Double quantum-well nitride LED shows almost no droop in luminous efficiency under a pulsed current up to 400A/cm2.

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Polarization matching as a route to nitride transistor enhancement

Germany’s RWTH Aachen and Fraunhofer-IAF have presented the first insulated-gate devices with an AlInGaN barrier.

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More polarization engineering enhancement in nitride semiconductor HFETs

Researchers in Germany report using a InAlGaN barrier layer to reduce interface polarization charge and shift threshold voltage into the positive, enhancement region for normally-off operation.

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Mechanical release of nitride semiconductors from sapphire using a boron nitride layer

A new mechanical process takes just seconds to separate nitride semiconductor layers from the sapphire substrate with minimal damage.

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All-ternary InAlAs/InGaAs DHBT high frequency and breakdown performance

University of Manchester achieves record cut-off frequency of 140GHz for all-ternary double-heterojunction bipolar transistors.

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Double dielectric on nitride semiconductor LED boosts output power by 25%

Korean researchers show how a combination of silicon dioxide and aluminum oxide layers offers anti-reflective and passivating effects.

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First RF power operation report for AlGaN barrier HEMT on diamond

Japan’s NTT makes devices that achieve breakdown voltage of 165V and power density of 2.13W/mm at 1GHz.

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GaAs wafer market to exceed $650m by 2017

RF electronics applications are fueling the GaAs wafer market, but LEDs will lead growth, says market research firm Yole Développement.

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III-V epi substrate & tool market a $6.1bn opportunity over 2012–2020

MOCVD overcapacity will take 12–18 months to absorb, while metal-organic precursor oversupply could last from 2012 beyond 2016, says market research firm Yole Développement.

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InAs nickelide meets 12nm ITRS requirements

Reaction of nickel with InGaAs yields estimated source/drain contact/extension resistance of 25Ω-μm.

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MOCVD produces highperformance mHEMTs on silicon substrates

HKUST achieves performance comparable to devices produced using MBE and III-V substrates.

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QD solar cell surpasses short-circuit current of reference GaAs device

Quantum dots without defects have been achieved by varying the growth temperature of the spacer layer between quantum dot layers.

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Watt-level QCL emission at 3.3µm without antimony

ETH-Zürich achieves short-wavelength quantum cascade laser operating at 350K using strain-compensated InGaAs/InAlAs on InP.

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Transparent conduction for nitride LEDs

Mike Cooke reports recent developments in transparent conducting materials.

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New approaches to efficiency droop in nitride & phosphide LEDs

New ideas and results from simulations and experiment at varying temperature down to 80K are emerging for efficiency droop problem of nitride semiconductor LEDs. Similar experiments on phosphide LEDs also show droop effects even when absent at room temperature. Mike Cooke reports.

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Longer-wavelength lasing in gallium antimonide heterostructure diodes

TU Munich reports room-temperature operation of type-I quantum well GaInAsSb laser at 3.7 m for possible detection of pollutant gases.

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Avoiding high temperatures and plasma improves InGaAs MOSFET performance

Self-aligned gate-last process allows a maximum oscillation frequency of 292GHz and a record low on-resistance of 199 -μm, reports Sweden’s Lund University.

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Flattening transconductance profiles in nitride HEMTs

Ohio State University uses a graded AlGaN layer to create nitride HEMTs with a quasi-three-dimensional electron gas channel.

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Doubling breakdown voltage with double heterostructure

China’s Xidian University shows how an AlGaN/GaN/AlGaN HEMT can also reduce off-state leakage by factor of 100.

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SiO2/GaN nano-rods give new base for high light output

Growing LEDs on nano-rods reduces dislocations and boosts light generation, while reflective air-void layer improves light extraction.

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Growth-mode transition to higher UV output

Taiwan researchers use heavy silicon doping to block threading dislocations in ultraviolet nitride LEDs.

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Honeycomb sweetens nitride solar cell performance

A silicon dioxide honeycomb structure that reduces light reflection can increase short-circuit current and fill factor, boosting energy conversion.

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All-silicon light emission through nanocrystal confinement

Silicon nanocrystal-based devices use technology developed for third-generation photovoltaics.

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IMEC/AMAT produce first crack-free MOCVD nitride DH-structures on 200mm Si

IMEC and Applied Materials reduce wafer bowing to under 20 m for AlGaN double heterostructures compatible with CMOS processing.

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Aluminum oxide passivation reduces off-current in AlN/GaN transistors

Leakage current decreased by almost four orders of magnitude in MOSHFET compared with a Schottky-gate FET device.

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Quantum well steps to efficient multi-junction solar cells

The University of Tokyo shows how photovoltaic junction current can be increased for devices with up to 20 quantum wells.

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Reflections on deep UV light extraction

Nagoya-based researchers have increased deep UV LED light output power by 1.55x using reflecting contact regions.

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First yellow-green and amber micro-LED arrays

Long-wavelength emission achieved using (0001) sapphire substrates.

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THz pulse boosts electron density in GaAs 1000-fold

Kyoto University findings could lead to ultra-high-speed transistors and high-efficiency solar cells.

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China creates its first high-performance InAlN HEMTs on sapphire

Output power density of 4.69W and power-added efficiency of 48% achieved at 10GHz.

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InGaAs buffer/channel structure boosts effective mobility 4.2x that of silicon

Japanese researchers increase performance of InGaAs-channel MOSFETs by 1.6x over that of InGaAs channel without interface buffer.

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Digital etching for damage-free gate recess in nitride transistors

AlGaN/GaN HFETs produced on silicon with 420mS/mm extrinsic transconductance and 500mA/mm maximum drain current.

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Two steps to high breakdown voltage in GaN diodes

Researchers in Japan have achieved the best values ever reported for GaN p-n diodes on free-standing gallium nitride substrates.

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Graphite substrate exploration for vertical nitride LEDs

Light output power increased 23% over conventional lateral LEDs.

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Grading barriers for improved hole transport

Taiwan researchers produce nitride LEDs with only 6% drop between peak value and 200A/cm2.

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Increasing performance with III-V transistors on silicon

Researchers in Japan use new source/drain technology to boost extremely-thin-body-on-insulator channels.

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First enhancement-mode AlInN/GaN MOS-HFET using SiON insulation

Nitek and USC produce normally-off devices with positive 1.8V threshold and 0.7A/mm drain current.

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GaN-on-Si: best solution for efficient energy management

Belgium-based IMEC spin-off EpiGaN sees huge opportunities for GaN-on-silicon power-up. Mike Cooke talked to CEO Marianne Germain.

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AlN interlayer doubles conversion of nitride semiconductor solar cell

Japanese researchers improve leakage and material quality of nitride solar cells by using a super-thin aluminum nitride layer.

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Compounding energy efficiency and performance

IMEC recently held its annual meeting presenting work to the international press. Mike Cooke attended and reports on some of the center’s research in relation to compound semiconductors.

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Driving ‘on-silicon’ solutions in lighting, power electronics & PVs

Translucent describes how it grows rare earth oxides using a solid-source epitaxial technique to enable high-quality MOCVD of not only GaN FETs and LEDs but also germanium CPV cells on silicon, leveraging the economies of scale of large-diameter wafers.

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Graphene as transparent conductor for UV LED current spreading

Four-layer graphene has been used as a transparent conducting contact for UV LEDs, doubling injection current at 10mA.

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Pyramid LED arrays on amorphous glass

Proof-of-concept for prospect of low cost, high performance for large-substrate production.

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Graded refractive index structures boost LED emission by up to 131%

Total internal reflection effects have been reduced with five layers of titanium-silicon dioxide dielectric.

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Improving etch process control in InGaN laser diodes

UCSB has developed AlGaN as an etch-stop material using its AlGaN-cladding-free laser diode structure.

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Barrier doping increases light from semi-polar nitride quantum wells

UCSB and Mitsubishi create devices with orange-red emissions beyond 600nm.

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Nitrogen/oxygen plasma improves p-type MgZnO for zinc oxide UV LEDs

LEDs produced with 35x the intensity of devices produced with nitrogen-only plasma at 20mA.

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Metal-nitride semiconductor avalanche for UV detection

Chinese group produces first MSM APDs on free-standing GaN with 400μm x 400μm effective area.

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Record output for single-chip 262nm mid-UV LED

Crystal IS and US ARL approach power needed for specialized use.

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Deep ultraviolet goes deeper on silicon

Epitaxial lateral overgrowth used to improve the quality of aluminum nitride templates for deep UV LEDs.

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Patterned sapphire for nitride enhancements

In the past few years, patterned sapphire substrates have been used to improve performance of nitride semiconductor light-emitting devices. Mike Cooke reports on some recent developments.

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Wet versus dry etching for sapphire wafers

Imtec Acculine’s Derek Mendes discusses how wet etching of patterned sapphire substrates for GaN LED manufacturing can present cost savings over dry etching that multiply dramatically as throughput and wafer size scales up, even if polishing touch-up work is subsequently performed to increase light extraction efficiency.

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More positive threshold with Al2O3 and m-plane nitride semiconductors

UCSB/Rohm produce HFETs with +3V threshold voltage and on/off ratio of 4 million.

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First Chinese Ka-band nitride semiconductor MMIC

Researchers look to higher frequency of ~30GHz for microwave device construction.

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InGaN/GaN DHBTs achieve cut-off of more than 5GHz

Georgia Tech researchers use graded emitter–base and base–collector to reduce V-defects and band discontinuity.

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Passivated AlInN/GaN HEMT pushes past 200GHz cut-offs

Switzerland-based research characterizes 30nm-gate-length high-electron-mobility transistor with cut-off frequency of 205GHz.

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First room-temperature blue/‘green’ VCSELs with current injection

Nichia has made a VCSEL laser emitting blue light in continuous-wave mode with power output of 0.7mW at an injection current of 11mA.

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Driving forward microLED video displays

Micron-size light-emitting diode arrays based on nitride semiconductors have been developed for displays and light sources for more than a decade. By combining such arrays with silicon CMOS active drive circuits, US researchers have now created microdisplays capable of delivering video images. Mike Cooke reports.

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Reducing LED droop at high current with nitrides

UCSB and Mitsubishi Chemical produce first blue-violet LEDs on (2021) GaN.

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China developing supply chain after its LED sector grows 33.8% in 2010

GaN epi output to surpass AlGaInP epi in 2011, says China’s CCID Consulting.

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Kyoto University makes record current-gain SiC BJTs

Surface recombination and deep-level reduction more than doubles performance of silicon carbide bipolar junction transistors.

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Hot electrons in nitride semiconductors

UCSB demonstrates the first hot-electron transistor in the III-nitride system, promising faster operation through near-ballistic transport.

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Quaternary nitride HEMT with record cut-off frequency

University of Notre Dame and epiwafer maker Kopin have produced an InAlGaN/AlN/GaN transistor with an fT cut-off frequency of 220GHz.

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High-performance 150nm mHEMT on GaAs grown using MOCVD

Highest fT value for 150nm device sets stage for potential high-volume production.

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Si implant enhances AlN spacer HEMT drain current

Japanese researchers achieve maximum current density of 1.3A/mm “competitive with other reported values for AlGaN/AlN/GaN HEMTs”.

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Built-in charge boosts quantum dot solar cell efficiency

US researchers show how delta doping between layers can increase the performance of quantum dot solar cells by up to 50%.

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Short-wavelength quantum cascade lasing without antimony

ETH-Zürich researchers achieve antimony-free Watt-level emission at room temperature at sub-3.6μm wavelengths.

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ZnO particle enhancement to nitride LED light extraction

Spin-coated zinc oxide nanoparticles have been used to boost nitride LED light power output by 39% without raising the forward voltage.

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Nitrogen-polar advantages for longer-wavelength nitride LEDs

Ohio State University uses new N-polar growth model to create 540nm green emitters.

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Piranha gobbles up hysteresis of aluminium oxide–nitride semiconductor interface

The Naval Research Laboratory shows how nitride surface pre-treatment can cut charge traps to almost a quarter for Al2O3 gate insulator.

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Nitride HEMTs grown on CMOS-compatible silicon

Swiss/French collaboration makes devices with cut-off/maximum oscillation frequencies of 70/93GHz.

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AlN barrier enhancements to nitride HEMTs on silicon

France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has published three reports of record performance for nitride semiconductor high-electron-mobility transistors (HEMTs) on silicon just in the last few months. Mike Cooke reports.

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Compound semiconductor industry continues growth

This year’s CS MANTECH event evidenced the continued economic recovery and technical progress in the compound semiconductor manufacturing industry. Mark Telford reports.

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Indirect Auger impact on nitride LED droop

Mike Cooke reports on the theory and experimental support from European research. Meanwhile, a US-Korean collaboration has made some observations on real-life internal quantum efficiency dependence on carrier density that does not fit the simple models generally used.

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Re-grown source–drain III-V MOSFETs demonstrate higher drain current

Tokyo Institute of Technology achieves drain current of 1.3mA/μm for InGaAs CMOS field-effect transistors.

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Nitride HEMTs with record 245GHz cut-off frequency

Oxygen plasma treatment reduces gate leakage current more than 100-fold in GaN-based highelectron-mobility transistor.

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Dynamic improvement for nitride semiconductor power switching

HRL Laboratories reduces dynamic degradation of ON-resistance in 1200V normally-off GaN-on-silicon FET to just 1.2x at 350V.

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Developments in the market for UHP hydrogen purifiers

Long treated as the Cinderella material of semiconductor processing, with limited usage in silicon semiconductor, LCD and GaAs manufacture, hydrogen and in particular ultra-high-purity hydrogen is becoming an increasingly important ingredient in new and high-growth areas of semiconductor processing technologies, says Noel Leeson of Power & Energy Inc.

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Simulating way to improved deep ultraviolet LEDs

Taiwan research suggests that thicker barrier layers at p-type end of multi-quantum-well structure could boost DUV LED power by 45%.

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Sapphire patterning boosts green LED light generation and extraction

Effect of reducing total internal reflection and improving crystal quality gives a 3.4x enhancement in external quantum efficiency, says RPI.

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Stepping up EBL in laser diode internal quantum efficiency

‘Simple yet efficient structural design change’ by Georgia Tech yields reduced threshold and increased slope efficiency.

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UCSB reports N-polar HEMT power density record

UCSB has fabricated an N-polar AlGaN/GaN high-electron-mobility transistor that matches the power density of devices using Ga-polar material on sapphire.

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Tellurium doping opens up tunnel junction for GaInP/GaAs solar cells

Korean researchers develop tellurium as an alternative to silicon for doping to high n-type carrier concentrations in GaAs-based PVs.

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Market trends in GaAs RF ICs

Strategy Analytics summarizes how the gallium arsenide radio-frequency IC market will see $3.7bn of power amplifiers being consumed by 1.7 billion handsets in 2014 as multi-band, multi-mode smartphones drive demand.

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2010: a tremendous year for MOCVD suppliers, but will it continue in 2011?

Ross Young of IMS Research forecasts that, driven by demand from China, emerging solid-state lighting, and continued penetration of LED backlighting, the metal-organic chemical vapor deposition market may exceed 1000 tools in 2011.

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Lateral conduction, substrate-free deep UV nitride semiconductor LEDs

South Carolina demonstrates first lateral-conduction substrate-free flip-chip 276nm LEDs grown on thick-AlN/sapphire templates.

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Liquid phase pushes deep UV LEDs to higher efficiency

Boston University develops MBE process for 273nm LEDs using material with high internal quantum efficiency of 32%.

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NanoLEDs, a new breakthrough for the LED industry

Xavier Hugon and Philippe Gilet of HelioDEL and Patrick Mottier of Leti explain how nanowire-based LEDs can improve LED efficiency and cost reduction for solid-state lighting applications.

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Making III-V contact with silicon substrates

High-speed logic, high-frequency/high-power transistors and photonics systems could benefit from marrying with silicon substrates. One impediment to this is contact formulations that use gold. Researchers are working to find a way to union through gold-free contacts. Mike Cooke reports.

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Back-barrier to InAlN HEMT short-channel effects

MIT and IQE RF have used an AlGaN back-barrier to increase the cut-off frequency of an InAlN HEMT by 8% from 195GHz to 210GHz.

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InGaAs tunnel FET with ON current increased by 61%

University of Texas at Austin uses n-type doping to reduce tunneling width and increase field in InGaAs tunneling field-effect transistors.

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Tantalum-based ohmic contacts for nitride semiconductor transistors

Ohmic contacts developed with resistance as low as 0.06Ω-mm.

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Polarization junctions increase nitride transistor breakdown voltage

University of Sheffield and Japan’s POWDEC demonstrate first polarization junction super HFETs.

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Improving photovoltaic material quality with patterned sapphire

Short-circuit current raised by 26% by growing photovoltaic cells on patterned substrates rather than flat substrates.

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Probing vacuum-deposited copper-zinc-tin-chalcogenide kesterite anneal process

Supplying tin during anneal to block decomposition increases solar cell efficiency.

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Seeking to unlock wide-range potential of nitride photovoltaics

Up to now, nitride semiconductor solar cells have only responded to the high-energy, short-wavelength end of the solar spectrum. Mike Cooke reports on recent attempts to extend this range.

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Exploring droop and wide-well nitride LEDs

Researchers at Taiwan’s Chang Gung University conclude that efficiency droop probably dominated by hole injection problems rather than electron overflow.

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Good grades for reducing nitride LED efficiency droop

Taiwan researchers cut LED efficiency droop from 34% to 4% using graded electron-blocking layer.

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Monolithic InGaAs nanolaser on silicon

University of California at Berkeley is developing a technique that could provide a powerful, new avenue to on-chip nanophotonic devices.

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UCSB demos recordfrequency normally-off nitride transistor

E-mode N-polar GaN MISFETs with 120GHz current-gain cutoff.

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Normally-off nitride transistor with oxide insulated gate

Electrochemical process used to create native oxide from AlGaN.

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Normally-off nitride semiconductor tunneljunction FET with high drive

Schottky source electrode used to achieve 326mA/mm drive current.

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Other articles in this issue include: Taking the a-plane to higher crystal quality. For this and much more, subscribe for free

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Short- and long-reach of new VCSEL applications

New applications beckon for vertical-cavity surface-emitting lasers.

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Ge doping option for gallium nitride on silicon substrates

Germanium used to create n-type conductivity without cracking.

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Light output boosted 116.7% at 20mA over conventional LED

Substrate removal and reflector layer boost red LED output.

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Self-aligned Ni-InGaAs as source–drain for InGaAs MOSFET

Nickel-InGaAs alloy reduces source–drain resistance by 80%.

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Other articles in this issue include: Two-dimensional hole gas with increased density and mobility, Free-standing GaN from lateral overgrowth and chemical etch, and Use of AlGaAs optical confinement/ cladding with InGaAsN. For this and much more, subscribe for free

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SiN raises nitride HEMT breakdown voltage without current collapse

Bilayer approach uses combinations of different SiN films as passivation.

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Corning probes optical losses in nitride laser at wafer level

Corning researchers finds that holes bound to Mg acceptors dominate waveguide loss in blue–green nitride lasers.

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Other articles in this issue include: AlGaN-channel with more than 50% Al achieves 1800V
breakdown voltage, Modified p-type layer increases light output from nitride LED and Taiwan researchers make steps to improve LED output. For this and much more, subscribe for free

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Polarized LED from RPI and Kyma promises more efficient displays

A record polarization intensity ratio of 0.77 has been achieved for top surface emission from >500nm-wavelength AlGaInN LEDs.

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Other articles in this issue include: Singapore researchers create amber light for nitride LEDs, Developing layer transfer for mixing compounds with silicon and Free-standing GaN substrate
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MOCVD automation and fab integration

The LED industry is at a key inflection point, says Aixtron's Dr. Rainer Beccard.

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Trapezoid wells effect reduce LED droop and lower cross-over point

Korean researchers find trapezoidal-well LEDs emit more light than conventional device at 5A/cm2.

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Other articles in this issue include: BeZnCdSe pure-green 545nm laser with threshold current density of 1.7kA/cm2, UCSB achieves CW operation of AlGaN-cladding free nonpolar lasers and Semi-polar light extraction comparable to conventional LEDs. For this and much more, subscribe for free

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Chinese burn into LED market driving MOCVD

Times are good for the two main MOCVD system makers Aixtron and Veeco, reports Dr. Mike Cooke.

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Simulations cast light on CIGS solar cell efficiency puzzle

German researchers find segregation effects/non-uniformity in CIGS stronger in gallium-rich material.

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Unveiling hot-electron over-spill in nitride LEDs

Staircase injector structures used to thermalize electrons, improving light emission performance in InGaN diodes.

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Quantum wells with AlGaN barriers boost blue-green laser light output

UCSB sees pathway to high internal quantum efficiency in green and yellow wavelengths.

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Other articles in this issue include: Texas Tech 'significantly' improves InGaN solar cell performance and Self-organized quantum dots reduce green efficiency droop. For this and much more, subscribe for free

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Nitride superluminescence expands blue-violet capability

Potential applications for high spatial coherence of superluminescent light-emitting diodes (SLEDs) include optical coherence tomography, fiber-optic gyroscopes and speckle-free displays. Mike Cooke reports.

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AlN substrate used to make 260–240nm UV LEDs

Crystal IS reduces threading dislocations in strained active layers by growth on high-quality bulk aluminum nitride substrates.

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Low threshold for m-plane nitride semiconductor lasing

UCSB grows m-plane violet lasers with comparable characteristics to state-of-the-art c-plane lasers.

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InAlN barrier strain used to shift nitride transistor thresholds

Georgia Tech produces normally-off (E-mode) FETs using piezoelectric fields.

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Tohoku and Sony develop first 100W blue-violet ultra-fast pulsed semiconductor laser

High-capacity optical disc storage and nano-fabrication targeted.

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Intel takes further step toward Terabit/s data transmission

III-V/silicon hybrid demonstrates 50Gb/s transmission over fiber.

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Lattice-matched SiGe on GaAs for triple-junction CPV solar cells

Dr. Andrew Johnson and Mr. Robert Harper explain how IQE has demonstrated the first triple-junction PV device with an epitaxial bottom cell grown lattice-matched on a 6" GaAs substrate.

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MANTECH comes full cycle in Portland

Latest developments reported at this year's CS MANTECH.

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Hopes and fears for high-mobility logic

Dr. Mike Cooke looks at the present state of III-V and germanium MOSFETs as possible future logic devices.

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Deep UV LED efficiency reaches 3%

External quantum efficiency of 5% for 255-280nm single-chip LEDs within reach, says Dr. Mike Cooke.

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Large chip improvements to deep-ultraviolet output

SET characterizes large-area 273nm and 247nm LEDs.

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Other articles in this issue include: Multi-story production of optoelectronics from GaAs release. For this and much more, subscribe for free

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