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LPE and A*STAR’s IME to develop high-quality 200mm SiC and specialty epitaxy processes
Aim is to enhance growth rate and uniformities, and reduce killer defect densities
GaN-on-Si device maker Innoscience opens Korean sales and design center
Innoscience Korea to design new solutions tailored to Korean market
Anker partners with Infineon, Navitas, Innoscience and Southchip to develop all-GaN fast chargers
Sub-100W chargers developed with Innoscience and Southchip; >100W chargers combine Infineon’s Hybrid Flyback and CoolGaN switch with Navitas’ GaNFast power ICs with GaNSense
EPC Space expands rad-hard GaN transistor family for critical space-borne and other high-rel environments
Low on-resistance 100V and 200V devices increase power density for space applications
Transphorm adds 50mΩ 650V SuperGaN FET in TO-263, extending SMDs to high-power applications
D2PAK simplifies and speeds development of GaN-based higher-power systems for data-center and broad industrial applications
ROHM’s fourth-generation SiC MOSFETs to be used in SEMIKRON’s eMPack power modules for EVs
SEMIKRON wins billion-Euro contract to supply power modules to German car-maker from 2025
Bosch investing €3bn in semiconductor business by 2026
€400m Reutlingen expansion to boost SiC chip production, while exploring GaN chips for electro-mobility applications
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