AES Semigas

Matheson Gas
21 July 2022
Buffers for GaN power on AlN substrate
Closer thermal expansion performance could enable larger-diameter growth substrates.
21 July 2022

LPE and A*STAR’s IME to develop high-quality 200mm SiC and specialty epitaxy processes

Aim is to enhance growth rate and uniformities, and reduce killer defect densities

19 July 2022

GaN-on-Si device maker Innoscience opens Korean sales and design center

Innoscience Korea to design new solutions tailored to Korean market

19 July 2022

Anker partners with Infineon, Navitas, Innoscience and Southchip to develop all-GaN fast chargers

Sub-100W chargers developed with Innoscience and Southchip; >100W chargers combine Infineon’s Hybrid Flyback and CoolGaN switch with Navitas’ GaNFast power ICs with GaNSense

19 July 2022

EPC Space expands rad-hard GaN transistor family for critical space-borne and other high-rel environments

Low on-resistance 100V and 200V devices increase power density for space applications

14 July 2022

Transphorm adds 50mΩ 650V SuperGaN FET in TO-263, extending SMDs to high-power applications

D2PAK simplifies and speeds development of GaN-based higher-power systems for data-center and broad industrial applications

14 July 2022

ROHM’s fourth-generation SiC MOSFETs to be used in SEMIKRON’s eMPack power modules for EVs

SEMIKRON wins billion-Euro contract to supply power modules to German car-maker from 2025

14 July 2022

Bosch investing €3bn in semiconductor business by 2026

€400m Reutlingen expansion to boost SiC chip production, while exploring GaN chips for electro-mobility applications

Bruker
Aixtron
K-Space
LayTec

Picosun