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July/August 2020
Carrier-localization engineering for DUV LEDs
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Effectively releasing tensile stress in AlN thick film for low-defect-density AlN/sapphire template
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Phosphor-free white LEDs for efficient displays and communications
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Baking and plasmaenhanced low-temperature GaN atomic layer deposition
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Boosting mobility in InAlGaNbarrier heterostructure
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GaN complementary logic on silicon using normally-off transistors
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ALLOS transferring RF & power electronics patents & know-how to new GaN-on-Si entrant Azur
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Smartphone shipments fall 15.7% year-on-year to 279.7 million in Q2
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June/July 2020
Phosphorus-free S-band InAs quantum dot lasers on SOI
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Lower thresholds for InAs quantum dash laser on silicon
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Room-temperature continuous-wave 1.55μm quantum dash laser diodes on silicon
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Optical transceiver market to more than double to $17.7bn by 2025
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Continuous-wave lasing from InGaN microdisk laser diodes on silicon
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GaAs wafer market growing at 10% CAGR to more than $348m by 2025
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Increasing wet etch rate in gallium nitride by thermal enhancement
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GaN and SiC power semiconductor markets to surpass $1bn in 2021
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II-VI relying on GE’s IP to conquer power SiC markets
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May/June 2020
Excitonic complexes in 2D semiconductors exploited to achieve optical gain
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Green VCSEL enabled by curved mirror process
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High-index-contrast gratings for III-nitride vertical-cavity surface-emitting laser diodes
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Seeking lower-cost non- and semi-polar gallium nitride light-emitters
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Eta Research demonstrates GaN-on-GaN epitaxy of vertical power device structures
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GaN RF market growing at 12% CAGR to $2bn in 2025
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Dual-layer silicon nitride for threshold engineering gallium nitride transistors
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Smartphone production falls 10% year-on-year in Q1 and to fall a record 16.5% in Q2
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April/May 2020
Direct-bandgap emission achieved from hexagonal Ge and SiGe alloys
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Indium tin oxide as cladding for more efficient green laser diodes
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Micro-scaling of indium gallium nitride blue and green light-emitting diodes
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Enabling cost-competitive mass production of micro-LED displays
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Room-temperature bonded GaN/diamond interface improves cooling of HEMTs
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Magnesium thermal diffusion for normally-on gallium nitride transistors
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Boosting output power in aluminium gallium nitridechannel transistors
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Barium titanate and aluminium gallium nitride power electronics
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March 2020
Monolithic indium arsenide quantum dot avalanche photodiode on silicon
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III-V photodetectors integrated with SOI transistors
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3D imaging and sensing market growing at 20% CAGR to $15bn in 2025
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Indium phosphide buffers on silicon for III–V laser diodes and data photonics
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Aluminium gallium nitride on silicon carbide for UV light-emitting diodes
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GaN-on-silicon platform for low-cost high-power electronics
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TSMC’s GaN-on-Si patents supporting ST’s strategic move towards power GaN adoption in automotive use
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Growing ε polytype gallium oxide with gallium nitride
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PiTrans project results in AlScN-based SAW resonators for smartphones
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February 2020
Adding indium selenide to prospects for 2D electronics
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Wide-bandgap nextgeneration semiconductor performance moving beyond standard technology
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Developing complementary p-channel transistors for GaN-on-silicon power
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Imec demos scalable III–V and III–N devices on silicon, targeting beyond-5G RF front-end modules
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Epitaxy equipment market to grow from $940m to over $6bn by 2025, driven by VCSEL and disruptive LED devices
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Thermal droop in InGaN LEDs
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Monolithic InGaN white LED
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Enhancing AlGaN hole injection with germaniumdoped tunnel junctions
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Patterned sapphire silica substrate for ultraviolet LEDs
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Dec/Jan 2020
Trends toward low-cost, high-power, high-frequency devices on silicon and more
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Self-aligned-gate gallium oxide metal-oxide-semiconductor transistors
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Hydrogen-terminated diamond transistors on gallium nitride/silicon
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Fujitsu grows diamond film to boost heat dissipation efficiency of GaN HEMT
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Record power-density AlGaN barrier transistors
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Monolithic optoelectronic integration of gallium nitride transistor
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Toward photodetector arrays based on indium gallium nitride micro-LEDs
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GaAs photodetector on thin germanium-on-silicon virtual substrate
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NREL demos first growth of AlInP and AlGaInP by HVPE
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Nov/Dec 2019
Aluminium gallium nitride enables deep ultraviolet laser diodes
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Indium phosphide template for laser and silicon-on-insulator integration
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SiC 600V transistors comparable to silicon
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Fraunhofer IAF claims first MOCVD production of AlScN layers for transistors
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High-carrier-density two-dimensional hole gas in strained gallium nitride
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Boost to magnesium doping of GaN on freestanding substrates
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InGaN surface-emitting superluminescent LEDs
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October 2019
Monolithic AC InGaN light-emitting chips
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Improving white LED luminous efficiency CRI
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Micro-LED technologies make significant progress over last 18 months
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Implementing III–nitride light-emitting devices on silicon substrates
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High-frequency InAlN barrier transistors on silicon
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Gadolinium oxide gate insulation for gallium nitride channel transistors
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Indium gallium arsenide one-transistor dynamic random access memory
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Vertical gallium oxide Schottky barrier diodes with improved performance
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SEPTEMBER 2019
III-nitride superluminescent diodes on silicon for displays and communications
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Metal nanoparticle plasmon push for III-nitride light-emitting diodes
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Reduced contact resistance aluminium gallium nitride channel power devices
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Ferroelectric gate stack for normally-off gallium nitride power transistors
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Increasing on-current in III–V transistors on silicon
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Thermal atomic layer etching of III-arsenide semiconductors
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Wafer-level backside processing of high-frequency indium phosphide chips
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