Features
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JULY/AUG 2019
Fraunhofer ISE sets efficiency records for silicon-based monolithic triple-junction solar cells
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UCLA demos first antimonide-based SAM-APDs for x-ray and gamma-ray detection beyond 50keV
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Ultra-low-power LEDs for IoTs and smart dust
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High-power polarized-light vertical-cavity surfaceemitting laser
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Electrically driven germanium-tin verticalcavity surface emitter
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Annealing to tune output wavelength of quantum dot lasers on silicon
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Gallium nitride quantum well HEMTs
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High-electron-mobility III-nitride on 3C SiC template on silicon
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Conductive penetration of aluminium nitride buffers on silicon substrates
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Indium arsenide and gallium antimonide fins on 300mm silicon
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JUNE/JULY 2019
Pushing high-frequency transistor performance above 700GHz
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Split gate improves octagonal-cell silicon carbide MOSFET performance
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Silicon carbide power device market growing at 29% CAGR to $1.93bn in 2024, driven by EV market
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Two-dimensional optoelectronic integration with silicon systems
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Developing a III-nitride-on-Si optoelectronic platform
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Nitrogen-polar GaN current-aperture vertical electron transistor
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Nitrogen-polar performance from gallium-polar growth
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Chromium/aluminium n-electrode for reflection boost of deep-ultraviolet LEDs
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VCSEL market growing at 31% CAGR to $3.7bn in 2024, driven by new smartphone and automotive functionalities
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Laser diode market to grow to $14bn in 2029, with direct-diode lasers contributing $2bn
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MAY/JUNE 2019
InGaN platelets for green and red LEDs
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Boosting near-UV and deep-UV performance of light-emitting diodes
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Distributed feed-back gratings for indium gallium nitride laser diodes
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First demonstration of RF N-polar GaN MISHEMT
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Positive threshold in GaN transistors with p-type aluminium titanium oxide
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GaN transistor power boosted by diamond thermal management
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Imec demos optimized process flows for high-performance Ge-based devices
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APR/MAY 2019
InGaAs quantum well transistors on silicon
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Indium arsenide quantum dot laser diodes on on-axis silicon
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Distributed Bragg reflectors for III-nitride VCSEL structures
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Eliminating waveguide propagation from III–nitride light-emitting diodes
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Gallium-doped zinc oxide transparent conductor for gallium nitride LEDs
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Yellow light-emitting diodes with high wall-plug efficiency
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Fraunhofer IAF enhances functionality of GaN power ICs with integrated sensors
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Power Electronics 2020+ project to grow lattice-matched ScAlN on GaN for transistors with very high voltages and current-carrying capacity
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Aluminium scandium nitride exhibits ferroelectric behavior
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MAR/APR 2019
Micro-LED display market growing at 86.4% CAGR from $272m in 2018 to $21,129m in 2025
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InP wafer market growing at 14% CAGR from $77m in 2018 to $172m in 2024
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High efficiency rates predicted for GaN devices by 2022
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IGaN’s 200mm GaN-on-Si epi to optimize cost in power switching
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Vertical integration of gallium nitride nanowire transistor and light-emitter
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First demonstration of fully vertical gallium nitride transistors on silicon
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Fin structures for aluminium gallium nitride high-power electronics
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Gallium oxide could have low cost in future, reckons NREL technoeconomic analysis
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FEB/MAR 2019
Gallium oxide prospects for high-voltage and high-power electronics
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Octagonal cell topology for high-frequency SiC transistors
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Diamond thermal management boosts output power of InAlGaN transistor
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Selective-area emitter for gallium nitride bipolar transistors
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Lateral graphene/hexagonal boron nitride heterostructures
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Graphene-enabled AlGaN nanopyramid arrays on silicon
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Monolithic indium arsenide antimonide on silicon mid-IR photodetector
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