Features
Each month we select articles from the latest issue of Semiconductor Today magazine and make them available here for free download. To see all the articles available each month in Semiconductor Today, please register for free now.
Mar/Apr 2018
Questioning carrier distributions in III-nitride LEDs
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Boosting InGaN LEDs on silicon with tensile stress
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III–nitride prospects for VLC applications
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Stacking III-nitride lasers with tunnel junction connections
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Continuous-wave operation of semi-polar blue laser diodes
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Tri-anode/slant-gate GaN Schottky barrier diode on silicon
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Vanadium dioxide enables III-nitride phase-transition field-effect transistor
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Feb 2018
Deep ultraviolet photonic crystal of AlGaN nanowires
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Reducing dislocations in GaAs on silicon templates
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Integrating InGaAs transistor and III–V laser on silicon
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Two-dimensional electronics for neuromorphic and other networking
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III–N resonant tunneling diodes at room temperature and below
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IEMN demonstrates over 1400V breakdown on ALLOS’ new GaN-on-Si epi
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‘First’ quasi-vertical gallium nitride trench MOSFET on 6-inch silicon
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RF GaN market to grow at 22.9% CAGR over 2017–2023, boosted by 5G implementation
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Dec/Jan 2018
Removing sapphire substrate from light-emitting diodes without cracking
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Ex-situ AlN-on-Si templates
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Monolithic indium arsenide quantum dots on silicon optoelectronics
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Reducing bow of InGaP on silicon wafers
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Gallium nitride transistor on silicon with 250GHz cut-off frequency
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Vertical power & high-speed III–V devices show their promise
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Practical gallium nitride vertical field-effect transistors
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Improving efficiency ofV-band indium gallium nitride transistors and MMICs
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Fujitsu bonds single-crystal diamond and SiC substrate at room temperature, boosting GaN HEMT performance
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November 2017
Thin sacrificial layers of BN enable transfer of GaN gas sensors onto metallic foils and flexible polymers
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Michigan predicts incorporating boron in InGaN increases LED efficiency at high power
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Hopes for mini-/micro-LED display market space invasion
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III-nitride on silicon optoelectronics transfer to plastic and glass
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AlN nanocolumns on gallium nitride templates
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Low-threshold indium arsenide quantum dot lasers on silicon
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Reverse-blocking GaN-on Si high-electron-mobility transistor
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Vertical gallium nitride p-n diode with 5.0kV breakdown
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October 2017
Boosting speed & breakdown voltage performance of Schottky barrier diodes
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Step-flow growth of greenemitting indium gallium nitride quantum wells
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InGaN quantum dot microcavity light emission
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Thinning p-type III-nitride layers to enhance effects of surface plasmons
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Automotive lighting market growing at 5.7% CAGR from $27.7bn in 2017 to $35.9bn in 2022
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LED lighting module market growing at 22.6% CAGR from $4bn in 2016 to $13.8bn in 2022, driven by mid-power modules
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Deep-ultraviolet gallium nitride quantum dots in aluminium nitride
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September 2017
Silicon implantation for gallium nitride LEDs
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Monolithic red-green-blue InGaN pixels from strain engineered nanopillars
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Near-ultraviolet laser diodes powering visible (white) light communication
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Silicon-on-insulator substrates for compound semiconductor applications
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Controlled spalling of bulk and free-standing gallium nitride substrates
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Gallium nitride on silicon in-plane gate field-effect transistors
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High-breakdown slanted tri-gate gallium nitride power transistors
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Aluminium nitride Schottky barrier diodes with breakdown more than 1kV
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SiC power device market to grow at 40% CAGR from 2020 to more than $1bn in 2022, after tipping point in 2019
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SiC MOSFET with record power efficiency for 1200V-class power device
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July / August 2017
Smart stacking III-V on crystal silicon solar cells to boost conversion
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Monolithic electrically injected microdisk lasers on silicon
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Indium gallium nitride light-emitting diodes on thin industry-spec silicon
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Finding the root of nanopipes in aluminium nitride on sapphire
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Indium tin oxide metal-organic chemical vapor deposition for UV LEDs
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Amber quantum wells on InGaN pseudo-substrate
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Pushing forward with compound semiconductor technologies
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Gallium nitride implanted current-aperture vertical electron transistor
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