News: Microelectronics
18 February 2021
Mitsubishi Electric adds Ku-band GaN HEMTs to product range
Tokyo-based Mitsubishi Electric Corp is adding two new 13.75–14.5GHz (Ku-band) 30W (45.3dBm) output, 9dB-linear-gain gallium nitride high-electron-mobility transistors to its lineup of GaN HEMTs for satellite communication (SATCOM) earth stations. On sales from 15 March, the two products, one for multi-carrier communication and the other for single-carrier communication, will support increased data-transmission capacity and smaller earth stations.
Ku-band satellite systems are increasingly being deployed for emergency communication during natural disasters and for satellite news gathering (SNG) by TV broadcasters in remote areas where cable networks do not exist. Meanwhile, in addition to the growing use of conventional single-carrier communication, multi-carrier communication is increasingly needed for fast, high-volume communication and to support the downsizing of mobile stations for purposes such as SNG.
So far, Mitsubishi Electric has introduced five GaN HEMTs for multi-carrier and single-carrier SATCOM earth stations. The two new 30W GaN HEMTs can enable more flexible amplifier designs, including for rated power levels and the use of GaN drivers. They can also support the downsizing of earth stations as well as faster, larger-capacity satellite communication.
Picture: GaN HEMTs for Ku-band SATCOM earth stations: single-carrier 30W MGFK45G3745 (left) and multi-carrier 30W MGFK45G3745A (right).
Specificallly, the MGFK45G3745A for multi-carrier communications delivers low third-order intermodulation distortion (IMD3) with wide offset frequencies of up to 400MHz for large-capacity, high-speed SATCOMs. The MGFK45G3745 for single-carrier communications has an offset frequency of up to 5MHz.
The new products are suitable for final-stage applications in 30W-class SATCOM amplifiers and driver-stage applications in 70-100W-class amplifiers.
