Mitsubishi Electric expanding lineup of Ku-band GaN HEMTs for SATCOM earth stations with 70W and 100W models

Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) for satellite communications (SATCOM) earth stations with the addition of new Ku-band (12-18GHz) 70W and 100W GaN HEMTs (operating at frequencies of 13.75–14.5GHz) suitable for multi-carrier applications.

Demand for Ku-band satellite communications and satellite news-gathering (SNG) is growing rapidly to support communications during natural disasters and in rural areas where the installation of cable network equipment is difficult. In addition, increasingly large-capacity, high-speed communications have expanded needs for both multi-carrier and single-carrier satellite communications.

Picture: GaN HEMTs for Ku-band SATCOM earth stations: the 100W MGFK50G3745A (left) and 70W MGFK48G3745A (right).

The new 70W (48.3dBm) MGFK48G3745A model GaN HEMT uses a new matching circuit to deliver what is claimed to be the industry’s widest offset frequency of up to 400MHz (80 times higher than that of existing models) and a low third-order intermodulation distortion (IMD3), for large-capacity, high-speed satellite communications (including for multiple carriers).

The new 100W (50.0dBm) MGFK50G3745A model GaN HEMT uses optimized transistor matching circuits to deliver a combination of what is said to be unmatched peak output power of 100W together with low IMD3 and an offset frequency of up to 200MHz, helping to downsize SATCOM earth stations by reducing on-board components.

Mitsubishi Electric will begin shipping samples of both new models on 15 January. The firm expects its new GaN HEMTs to accelerate the realization of smaller earth stations as well as faster and larger-capacity communications for various needs.

Tags: Mitsubishi Electric GaN HEMT

Visit: www.MitsubishiElectric.com/semiconductors