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Silicon carbide in electric and hybrid electric vehicles has been delayed beyond 2018, says Yole Developpement, but 6'-inch wafers for power electronics will enter the market in 2016–2017.

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Envelope tracking market to exceed 4 billion units by 2018

Nujira highlights a $3bn market opportunity over five years as envelope tracking becomes ubiquitous for 4G smart-phones.

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Low-cost non-toxic process for cadmium telluride solar cells

The University of Liverpool proposes the use of magnesium chloride in place on cadmium chloride in CdTe solar cell production.

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Working toward lasers for on-chip global interconnects

Tokyo Institute of Technology has claimed the first RT-CW operation of a lateral-current-injection GaInAsP membrane FP laser on silicon.

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Toshiba red InGaN LED reaches 1.1mW at 20mA

Highest power output achieved so far for such devices.

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Increasing light output from InGaN LEDs on silicon wafer

Substrate removal from under device reduces light absorption for six-fold increase in emission slope.

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MOCVD trends helping to drive down LED chip costs

Veeco’s Sudhakar Raman explains how a new generation of processing equipment is cutting the cost of manufacturing high-brightness LEDs by improving the yield and productivity of the MOCVD process.

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Band engineering for improved photo-electro-chemical etch

A band-engineering technique has been developed to improve photo-electro-chemical etch of nitride materials for optoelectronic and micro-electro-mechanical system applications.

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Ultrathin transitionmetal dichalcogenides and 2D optoelectronics

A strong coupling of light and electrons and holes in ultrathin transition-metal dichalcogenides has opened prospects for efficient solar cells. Mike Cooke reports on developments in devices and structures consisting of compounds of the transition metals molybdenum (Mo) and tungsten (W) and the chalcogenides sulfur (S) and selenium (Se).

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Aspect ratio trapping to improve InGaAs quality on silicon substrates

ART technique eliminates GaAs anti-phase boundaries at a relatively low aspect ratio of 1.3.

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Passivating nitride transistors without vacuum processing

Research team claims first application of ultrasonic spray pyrolysis deposition of aluminium oxide in GaN HEMTs.

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Gallium nitride thin-film transistors produced at less than 250°C

Low-temperature process suggests potential for flexible/transparent electronics application.

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Improving single photon counting at high temperature with silicon carbide

Researchers claim the first high-temperature Geiger-mode avalanche photodiode performance with low dark current.

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Enabling silicon photonics through advances in III-V integration on silicon

EV Group’s Dr Martin Eibelhuber discusses a wafer-level die transfer process for bonding InP laser dies to a silicon photonics wafer, allowing volume production.

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Simplifying zinc oxide/ gallium nitride nano-rod LED fabrication

An oblique-angle RF magnetron sputtering technique could result in low-cost, reliable mass production of nano-scale optoelectronics.

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Techniques for highefficiency nitride LEDs on lithium gallate substrate

External quantum efficiency and light output power have been achieved that are comparable to best values in the field.

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Tailored last quantum barrier achieves more efficient, powerful GaN LEDs

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Nano-scale gallium oxide high-voltage transistor demonstration

Easy production of nanomembranes of wide-bandgap material motivates research towards integration into multiple platforms.

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Stress bumps improve nitride semiconductor packaged transistor performance

Flip-chip technology has been used to introduce strain-enhancement for the first time, according to researchers.

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Polarization-engineered high mobility of two-dimensional hole gas in GaN

P-channel heterostructure field-effect transistor with 108 on/off ratio shows great potential for complementary logic in harsh environments.

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Optimizing ammonia-based MBE for gallium nitride electron mobility

University of California Santa Barbara and National Taiwan University have claimed the highest roomtemperature bulk GaN mobility reported to date.

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Deep UV LED research moving performance beyond 10% efficiency

Mike Cooke reports on progress made by a number of research teams.

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Wider-band modulation of blue-green light-emitting diode

Taiwan researchers achieve record optical 3dB modulation bandwidth of 463MHz for an InGaN quantum well device.

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Developing phosphor-free white light from nanopyramid LEDs

Researchers in China have achieved an estimated four-fold improvement in light extraction over planar devices.

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Monolithic integration of nitride HEMTs and LEDs

HKUST develops techniques for applications in smart lighting, LED micro-displays and visible light communication.

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MIT demonstrates first vertical gallium nitride diodes on silicon

A vertical p–n structure achieves soft breakdown of 300V, providing a potential low-cost alternative to GaN-on-sapphire diodes.

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Growing cubic and hexagonal GaN on standard (100) silicon substrates

IBM and Northwestern University develop a growth technique with potential for monolithic integration with CMOS and polarization-free light-emitting devices.

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UCSB reports highest-performing III-V MOSFETs

0.5mA/μm on-current, 100nA/μm off-current and 0.5V operating voltage match or exceed production silicon devices.

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Progress towards combining III-V technology with silicon manufacturing

Mike Cooke reports on contributions to the ‘Technology’ section of the recent 2014 Symposium on VLSI Technology and Circuits.

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Beryllium oxide interlayer reduces interface trapping in InGaAs MOSFETs

A US/Korea team has developed a BeO/HfO2 bilayer dielectric gate stack for QW MOSFETs for the 7nm technology node and beyond.

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Growing InGaAs MOSCAPs directly on (100) silicon substrates

A metamorphic buffer of only 840nm is the thinnest reported to date, according to researchers in Taiwan.

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Top-down InGaAs nanowire fabrication enabled by novel etch processing

MIT shows how plasma etch surface damage can be mitigated by using digital etch repair cycles following ICP-RIE etch.

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Chloride-based chemical doping yields low-contactresistance molybdenum disulfide field-effect transistors

SRC- and SEMATECH-supported Purdue research presented at VLSI

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Silicon photonics market to grow at CAGR of 38% from $25m in 2013 to $700m in

Emerging optical data centers of big Internet firms to trigger growth

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Improving as-grown indium gallium nitride solar cells

InGaN cells have achieved up to 2% efficiency without coatings or surface treatments, showing potential for multi-junction devices.

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Simplifying indium gallium arsenide growth on gallium arsenide substrate

Researchers in China investigate the process potential for replacing germanium in high-conversion-efficiency tandem solar cells.

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Pseudo-direct gaps for efficient light emission and absorption

Mike Cooke reports on recent research seeking to develop optoelectronic devices based on indirect-bandgap semiconductors with a nearby direct gap.

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Bipolar diffusion injection into indium gallium nitride quantum wells

Researchers in Finland develop current injection method with possible use in nanowire, near-surface and large-area light-emitting structures.

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Distributed Bragg reflectors for InGaN LEDs on silicon

Chinese researchers use DBRs to boost wall-plug efficiency by 24%.

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Substrates shaping trends in LED front-end manufacturing

The impact of sapphire substrates will grow unless GaN-on-Si and GaN-on-GaN improves in performance and cost.

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Improving electrically pumped external-cavity mode-locking

ETH Zurich and Philips Technologie claim shortest pulses and highest powers for 981nm passively mode-locked electrically pumped VECSEL.

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InP/GaAsSb DHBT with record more than 700GHz power-gain cut-off

Base contact resistance has been reduced by in-situ argon sputtering treatment of the GaAsSb base before metal deposition.

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Pushing high-power, high-frequency performance of GaN HEMTs on silicon

Singapore researchers claim a record Johnson figure of merit of 8.32THz-V for conventional AlGaN high-electron-mobility transistors.

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GaN to grow at 9% CAGR to over 18% of RF device market by 2020

GaN-on-Si to challenge Si-LDMOS under 3.5GHz?

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Millimetre-wave SiGe IC design – a technology overview

Increasing consumer demand for high-data-rate wireless applications has resulted in accelerated development activity to exploit the millimeter-wave frequency range, where large amounts of spectrum are available.

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Selective III-V re-growth multi-gate transistor boosts performance

Sweden’s Lund University reports record cut-off frequency and maximum oscillation frequency for III-V multiple-gate MOSFETs.

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Direct growth of graphene on aluminium nitride on silicon

Graphene grown on AlN templates on silicon substrates show potential for larger-area lower-cost application to CMOS and GaN-based devices.

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Vertical GaN transistor with 1.6kV blocking voltage

Threshold voltage of +7V provides normally-off behaviour, making Toyoda Gosei device feasible for automotive power applications.

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Combining low on-resistance with high breakdown voltage

IEMNand EpiGaN demonstrate AlN/GaN/AlGaN transistor with record combined 1.9kV breakdown and 1.6mΩ-cm2 specific on-resistance.

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Direct growth of III-V quantum dot lasers on silicon

UCSB and IQE demonstrate record-performance 1.3μm InAs QD laser grown on silicon as a competitive alternative to wafer bonding.

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GaN-on-silicon enabling GaN power electronics, but to capture less than 5% of LED making by 2020

Power electronics firms to buy epiwafers if price keeps falling, but LED firms to make own epiwafers for mass production.

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Marked advancement in sapphire crystal quality from improved process control

John Ciraldo of Rubicon Technology discusses how sapphire substrate producers need to continually improve quality to keep up with advances in LED technology.

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Sapphire core prices to resume rise in Q2–Q3/2014; wafer prices to rise slightly in Q2

Prices to stabilize by end-2014 then start falling in late 2015 as cost structure improves.

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Next investment cycle already begun in LED front-end equipment

Market to peak at nearly $580m in 2015, with MOCVD comprising more than 80%, forecasts Yole Développement.

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LED investment to recover in light of solid-state lighting adoption

After two years of decline, LED epi/chip equipment spending is stabilizing in 2014 and will grow in 2015, says Clark Tseng of SEMI

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Indium gallium nitride LEDs produced at 480°C

Japan researchers develop low-temperature process that could lead to low-cost manufacturing of nitride LEDs on large-area glass substrates.

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Enabling high-voltage InGaN LED operation with ceramic substrate

Better thermal conductivity reduces self-heating performance degradation, report Taiwan National Central University and Epistar.

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Improving LED efficiency through InN nanostructures

Bridging the green gap by using quantum confinement.

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A decade of solid-state lighting R&D highlights at ISCAS

Here we present a summary of the progress made in solid-state lighting by the Institute of Semiconductors, Chinese Academy of Sciences over the last 10 years

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Exploring optoelectronics potential of monolayer tungsten diselenide

Three groups have recently reported on preliminary experiments with photovoltaic and light-emission effects from pn junctions created using split-gate electrostatic doping.

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EU project DEEPEN to develop atom-to-device simulation environment for photonic and electronic nanostructures

Tyndall National Institute in Cork, Ireland is leading a European research project to develop a test environment to help create the electronic and photonic devices of the future.

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