News: Microelectronics
1 June 2022
GaN Systems makes available GaN transistor ADS models for ISM RF power
GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has announced availability of its GaN transistor ADS (Advanced Design System) models to facilitate customer ease-of-use in RF power markets traditionally dominated by expensive silicon LDMOS and other RF power technologies. By replacing these existing devices with GaN Systems’ power semiconductors at frequencies of typically 13-81MHz, customers can benefit from high power output and efficiency while reducing the size and at about 1/3 the cost of their existing solutions, the firm says.
The availability of the ADS models is a key ingredient for high-frequency design. GaN Systems’ power transistors, such as its GS66502B and GS66508B, have been implemented in several applications. Capable of operating up to 100MHz and at power levels from 2kW to 250kW, applications include RF heating and drying systems, high-frequency radar systems, CO2 lasers, RF defrosters, communication jammers, and plasma generators.
GaN Systems reckons that its expertise in both power and RF uniquely positions it to provide solutions for the ISM RF power market. Customers already rely on the firm’s high-frequency expertise for solutions in the wireless power segment for applications in the 6-27MHz area. With RF power, as frequencies increase, the tools required increase with the need for ADS models to ensure high reliability of simulation results prior to final design.
“GaN Systems is making its mark in the RF power world,” reckons CEO Jim Witham. “We have a winning combination of world-class GaN power transistors, high reliability, and application expertise to capture and revolutionize these market segments with lower-cost, high-efficiency GaN devices,” he adds.
