News: Microelectronics
28 September 2021
Showa Denko agrees long-term SiC epi supply contract with Toshiba
Tokyo-based wafer manufacturer Showa Denko K.K. (SDK) has concluded a long-term supply contract with Japan’s Toshiba Electronic Devices & Storage Corp, which makes silicon carbide (SiC)-based power semiconductor devices, to supply SiC epitaxial wafers for two and a half years (with an optional extension clause).
Toshiba has been developing and commercializing SiC-based power devices including inverters for railcars, while adopting SiC epiwafers manufactured by SDK as the main material for SiC-based Schottky barrier diodes (SiC SBDs) and SiC-based metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) .
SDK says that Toshiba concluded the long-term contract because it appreciates the homogeneity in properties (such as nitrogen doping) and the low surface defect density in SDK’s SiC epiwafers. Based on improvement in performance of the SiC epiwafers, the long-term contract is expected to further strengthen technical cooperation between SDK and Toshiba. In addition, SDK expects that Toshiba’s adoption of its SiC epiwafers will help it to expand its SiC epiwafer business further.
Claiming to be the largest independent manufacturer of SiC epiwafers, the Showa Denko Group says that it will continue to accommodate with rapid expansion of the SiC epiwafer market, contributing to the propagation of SiC power semiconductors that save energy through low power loss and less heat generation.
Infineon agrees SiC material supply and development contract with SDK
DENSO adopts SDK’s 150mm SiC epiwafers
SDK plans third expansion of high-grade SiC epi production in two years
