News: Optoelectronics
1 October 2021
Princeton Infrared announces Phase II SBIR award to develop high-res SWIR electro-optical seeker
Princeton Infrared Technologies Inc (PIRT) of Monmouth Junction, NJ, USA – which designs and manufactures indium gallium arsenide (InGaAs)-based shortwave-infrared (SWIR) line-scan cameras, visible-SWIR science cameras, and 1D and 2D imaging arrays – has received a Phase II Small Business Innovation Research (SBIR) award from the Office of The Secretary of Defense to fund the development of a Megapixel high-resolution seeker with extended wavelength detection capability covering the entire SWIR range.
The camera will have a high pixel operability with a digital output at greater than industry standard frame rate at full resolution. The imager will be manufactured on indium phosphide (InP) substrates using the InGaAs/GaAsSb system, allowing for low cost and the ability to utilize modern III-V semiconductor processing. Additionally, the imager will be manufactured and hybridized at wafer scale to minimize cost.
“This research has huge benefits for both the defense and commercial markets,” states president Martin H. Ettenberg Ph.D. “This research will lead to wide-spectral-width imagers in the SWIR which will provide for various hyperspectral imaging opportunities,” he adds. “We are also excited to be leveraging new technology to bring much lower-cost imagers to the market through wafer-scale hybridization. These new imagers will require significantly less cooling, allowing reduced system size, weight, power and cost, which is important to both our military and commercial customers.”
PIRT wins $1m, one-year Air Force Armament Directorate award
PIRT announces Phase II Award from MDA to develop ToF camera for 3D imaging
Princeton Infrared Technologies awarded AFRL SBIR Phase II contract for coherent LADAR detectors
