News: Microelectronics
1 October 2021
EPC’s eGaN FETs used by innosonix in high-end audio amplifier
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA says that, by changing from traditional silicon FETs to its EPC2059 enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistor (FET), Germany-based innosonix GmbH has reduced power-consuming idle loss by 35% and lowered the on-resistance to increase the total power efficiency by 5% in its latest high-end Maxx Series multi-channel power amplifier.
The EPC2059 is a 6.8mΩ, 170V eGaN transistor offering high audio performance for high-end amplifier applications. Its low on-resistance and low capacitance enables high efficiency and lowers open-loop impedance for low transient intermodulation distortion (T-IMD). The fast-switching capability and zero reverse recovery charge enable higher output linearity and low cross-over distortion for lower total harmonic distortion (THD).
By using the EPC2059 eGaN FET, innosonix was able to decrease the idle switching loss as the total gate charge was nearly halved. The output capacitance only doubled for tripling the maximum drain voltage. This enabled Innosonix to switch from a full-bridge to a half-bridge design, which also reduced component count costs. The low package inductance gives a clean switching waveform, which leads to a nearly perfect switching voltage and, therefore, better linearity. This resulted in a reduction in harmonic distortion of almost 6dB, and the subjective audio quality has improved audibly.
The MAxx multi-channel power amplifiers mark what is claimed to be an unprecedented standard for high-end audio installations in residential, science, industry and other applications where high channel count is required. Paired with an unseen low power consumption per channel, the MAxx series fits with the requirement to reduce CO2 emissions, since many devices are running 24 hours a day, seven days a week.
The MAxx series will offer what is reckoned to be the highest channel count per rack space in one single unit. The high-density package offers a new design perspective not possible with conventional solutions, it is claimed.
“As a small company, it‘s not always easy to do business with some large semiconductor manufacturers and to be taken seriously,“ says innosonix’s CEO Markus Bätz. “We chose the EPC2059 eGaN FET as it perfectly matches innosonix’s voltage current and price requirements, and its small form factor is an impressive feature for designing high-density circuits,” he adds.
“This application is a great example of the real benefits that GaN brings and, together with our distribution partner FinePower, we have worked closely with innosonix to find the best eGaN FET to meet the design challenges that the Maxx power amplifier brings,” says Wolfram Krüger, EPC’s VP sales Europe.
