News: Microelectronics
8 March 2021
Infineon’s CoolGaN used in Delta’s rectifiers
Infineon Technologies AG of Munich, Germany says that its CoolGaN 600V enhancement-mode (e-mode) gallium nitride high-electron-mobility transistor (HEMT) in the DFN8x8 package is a key component in Delta’s DPR 3000E EnergE rectifiers, enabling energy efficiency of 98%.
“Delta’s Telecom Power Solutions have built an unparalleled track record in the global market, especially by enabling lower energy consumption and CO2 emissions in 4G and the next-generation 5G telecommunications,” claims Eton Lee, general manager of Delta’s Communication & Information Solutions business unit. “We have achieved that success by collaborating with tier-one brands to develop our solutions. Moreover, Infineon’s CoolGaN chips deliver excellent performance to Delta’s 3000E rectifiers, which boast industry-leading efficiency up to 98% and an outstanding power density of 56.8W/in3. It provides high performance while consuming little energy,” he comments.
Picture: Infineon’s CoolGaN 600V e-mode HEMT in a DFN8x8 package, used in Delta’s rectifiers DPR 3000E EnergE rectifiers and enabling energy efficiency of 98%.
“At Infineon, we work closely with our customers to help them achieve ever-growing requirements towards energy efficiency and also power density,” says Stefan Obersriebnig, product line head High Voltage Conversion of Infineon’s Power & Sensor System Division. “With our complete portfolio of wide-bandgap solutions, i.e. CoolGaN and CoolSiC, we are paving the way towards a new era in the power industry.”
Infineon says that, besides being suitable for industrial applications (e.g. industrial telecom and server SMPS), its family of CoolGaN devices (which are qualified according to JEDEC standards, offering lifetimes beyond 15 years) is also a match for consumer applications such as adapters, chargers, wireless charging and class-D audio amplifiers.
