News: Microelectronics
15 June 2021
EPC adds CSP-packaged 80V and 200V devices to high-performance eGaN FET family
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has advanced the performance capability while lowering the cost for off-the-shelf gallium nitride transistors with the introduction of the EPC2065 and EPC2054.
The EPC2065 is an 80V, 3.6mΩ, 221Apulsed eGaN FET in a 7.1mm2 chip-scale package. The small size and the efficiency reduce the overall power system size and weight and make it suitable for 32V-48V BLDC motor drive applications for eMobility ebike and escooters, service, delivery, logistic robots, and drones. In these applications the driver is integrated with the motor and miniaturization is a key factor. The ability to operate with significantly shorter dead times results in less noise and less EMI. The device is capable of high-frequency operation to achieve the highest density for high-frequency DC-DC converters for computing and industrial applications and for synchronous rectification.
The EPC2054 is a 200V, 3.6mΩ, eGaN FET in a 1.69mm2 chip-scale package. The device can deliver 32A pulsed current is an extremely small size, with very fast on-off transition times and very small capacitance and inductances, making it suitable for industrial light detection and ranging (LiDAR)/time-of-flight (ToF) applications. The low resistance, low switching losses, no reverse recovery charge, fast switching, high-frequency capability, and the tiny footprint make the EPC2054 a cost-effective and high-density solution for a wide range of applications including, but not limited to, high-frequency DC-DC, synchronous rectification, wireless power, class-D audio, automation, solar and optical.
“With the clear superiority of these new eGaN FETs, power system designers can take advantage of devices that are higher performing, smaller, more thermally efficient, and at a comparable cost,” says co-founder & CEO Alex Lidow. “The displacement of the power MOSFET with GaN devices continues to accelerate.”
Pricing is $1.85 each and $0.82 each for the EPC2065 and EPC2054, respectively, in 2.5k-reel quantities. The corresponding half-bridge development boards EPC90137 and EPC 9094 are both $123.75. All products and boards are available from distributor Digi-Key Corp.
