News: Microelectronics
15 July 2021
Teledyne partners with Integra to launch first 100V GaN/SiC RF power technology for avionic
Teledyne e2v HiRel Electronics of Milpitas, CA, USA (part of the Teledyne Defense Electronics Group that provides solutions, sub-systems and components to the space, transportation, defense and industrial markets) is to offer high-reliability-qualified versions of the new 100V gallium nitride on silicon carbide (GaN/SiC) power transistors of Integra Technologies Inc (ITI) of El Segundo, CA, USA, which is claimed to be the first 100V RF GaN/SiC technology for mission-critical defense applications.
Targeting radar, avionics, electronic warfare (EW), industrial, scientific and medical systems, Integra’s newly announced 100V RF GaN/SiC high-electron-mobility transistor (HEMT) technology is said to gives designer the ability to dramatically increase system power levels and functionality while simplifying system architectures with less power-combining circuitry compared with the more commonplace 50V and 65V GaN technologies. Customers ultimately benefit with a smaller system footprint and lower system cost.
“By delivering about twice the power of a 50V GaN transistor in a single package, it will eliminate a significant number of combiners and associated electronic circuitry, resulting in lower system volume, weight and cost, and higher system efficiency,” comments aerospace & defense radar systems architect and technology executive Dr Mahesh Kumar.
“This innovative technology removes the barriers limiting system performance today and allows new architectures previously not possible,” says Integra’s president & CEO Suja Ramnath. “This disruptive technology will enable our customers to deliver a new generation of high-performance, multi-kiloWatt RF power solutions while reducing their design cycle time and product costs,” he adds.
Teledyne will qualify Integra’s first 100V product, the IGN1011S3600, which offers 3.6kW of output power over an operating frequency range of 1030-1090MHz, greater than 19dB of large-signal gain, and efficiency of up to 75% (during the RF pulse) in a single GaN transistor, designed specifically for next-generation avionic systems. Teledyne HiRel will provide further assurance for military and new space applications. The IGN1011S3600 100V RF GaN/SiC is available for sampling to qualified customers.
“Our most demanding customers are requesting higher-power-density RF power devices,” says Brad Little, VP & general manager of Teledyne e2v HiRel. “Adding additional screening and qualifications for the new devices will assure long operational life in even the harshest environments.”
Teledyne e2v HiRel and Integra partner on high-voltage GaN devices
