News: Microelectronics
16 July 2021
Xiaomi launches third fast-charger based on Navitas’ GaNFast power ICs
Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland says that China’s Xiaomi has launched its third GaNFast charger, a 65W dual-output fast charger. The 65W 1A1C has a USB-C output of up to 65W to power laptops and fast-charge smartphones via USB-PD 3.0, QC and PPS fast-charging protocols, with an extra USB-A output up to 18W in order to conveniently - and simultaneously - charge another phone or accessory such as headphones.
The new GaN charger can power the Xiaomi Mi11 from 0% to 100% charge in only 45 minutes. Due to high-speed GaN power ICs, the charger has a small size of only 69cc with folding AC-pins – a 30% reduction versus Xiaomi’s previous silicon-based designs - and a weight of just 104g for portability. The charger is available now from Xiaomi for a retail price of 149RMB (about US$23).
Gallium nitride (GaN) is reckoned to run up to 20x faster than legacy silicon chips. Navitas’ proprietary GaN power ICs integrate GaN power field-effect transistors (FETs) and GaN drive plus control and protection circuitry in a single SMT package. The firm says that these GaNFast power ICs become easy-to-use, high-speed, high-performance ‘digital-in, power-out’ building blocks and deliver up to 3x faster charging in half the size and weight, and with up to 40% energy savings compared with earlier silicon solutions. An estimated $13.1bn electrification opportunity includes mobile fast chargers and adapters, data centers, solar energy, and electric vehicles (EVs).
Xiaomi’s 65W 1A1C GaN charger was designed and manufactured by R&D company Nanjing Kuke Electronic Technology Co Ltd (Cuktech) and uses the NV6115 GaNFast power IC in a high-frequency, soft-switching topology, with robust 650V/800V rating and up to 2MHz high-speed switching in a small-footprint 5mm x 6mm QFN package, which is key to achieving high reliability and small size.
“GaNFast power ICs have been recognized and trusted by brand manufacturers and consumers for its simple design, ease-of-use and ultra-high integration,” comments Cuktech’s CEO Dr Wei Chen. “The high reliability of GaNFast power ICs also makes our products recognized and trusted by brand manufacturers and consumers. The cooperation with Navitas and Xiaomi will accelerate the expansion of consumer GaN charger market in the future and achieve a win-win situation for all parties,” he adds.
“Xiaomi’s openness to new materials and technologies, and its continued commitment to gallium nitride, demonstrates Xiaomi’s recognition of the advantages of GaN devices over traditional silicon devices,” comments Navitas Semiconductors’ CEO Gene Sheridan. “It is a long and successful partnership, introducing a series of world-class chargers, and celebrating mass-production milestones, as when we presented Xiaomi with a special award for their receiving the 10,000,000th GaNFast power IC back in November 2020.”
Navitas and Xiaomi say that they will continue to work closely on technology. GaNFast power ICs not only enable Xiaomi’s charger products to be smaller in size while maintaining the same power, but they also have a 10x lower CO2 emission footprint than legacy silicon chips, it is reckoned, contributing to Xiaomi’s carbon neutrality program.
