News: Microelectronics
1 December 2021
Microchip expands GaN RF power portfolio
Microchip Technology Inc of Chandler, AZ, USA has significantly expanded its gallium nitride (GaN) radio frequency (RF) power device portfolio with new monolithic microwave integrated circuits (MMICs) and discrete transistors that cover frequencies up to 20GHz. The devices combine high power-added efficiency (PAE) and high linearity to deliver new levels of performance in applications ranging from 5G to electronic warfare, satellite communications, commercial and defense radar systems and test equipment.
Like all Microchip GaN RF power products, the devices are fabricated using GaN-on-silicon carbide technology that provides the best combination of high power density and yield, as well as high-voltage operation and longevity of more than 1 million hours at a 255 C junction temperature.
They include GaN MMICs covering 2-18GHz, 12-20GHz, and 12-20GHz with 3dB compression point (P3dB) RF output power up to 20W and efficiency up to 25%, as well as bare die and packaged GaN MMIC amplifiers for the S- and X-bands with up to 60% PAE, and discrete high-electron-mobility transistor (HEMT) devices spanning DC to 14GHz with P3dB RF output power up to 100W and maximum efficiency of 70%.
“Microchip continues to invest in our family of GaN RF products to support every application at all frequencies from microwave through millimeter wavelengths, and our product portfolio includes more than 50 devices, from low power levels to 2.2kW,” says Leon Gross, VP of Microchip’s discrete products business unit. “Together, the products announced today span 2-20GHz and are designed to meet the linearity and efficiency challenges posed by the higher-order modulation techniques employed in 5G and other wireless networks, as well as the unique needs of satellite communications and defense applications.”
Microchip provides board design support to help with design-ins, as do the firm’s distribution partners. It also provides compact models for the new GaN products that let customers more easily model performance and expedite the design of the power amplifiers in their systems.
The new power devices include the ICP0349PP7-1-300I and ICP1543-1-110I, as well as other Microchip RF products, and are available in volume production.
