News: Optoelectronics
19 November 2020
Excelitas launches Generation 2 905nm high-volume pulsed laser diode
Excelitas Technologies Corp of Waltham, MA, USA (which provides customized photonic solutions to OEMs) has introduced its enhanced Generation 2 905nm high-volume pulsed semiconductor laser diode. Featuring a multi-layer monolithic chip design, the second-generation product provides higher efficiency (3W/A) for further ranging and reduced power consumption, as well as an improved gallium arsenide (GaAs) structure to offer typically 85W pulsed peak power when driven at 30A for an increase of more than 20% compared with the first-generation product.
Suitable for industrial and consumer range finding and light detection & ranging (LiDAR) applications involving time-of-flight measurements, the enhanced pulsed laser diode design includes an optical emitting area of 225μm x 10μm by emission of three laser lines, offering high output power in a small emitting area.
The laser chips are fabricated using metal-organic chemical vapor deposition (MOCVD) in a TS 16949 certified high-volume facility.
Features and benefits include:
- increased output power by more than 20%: a customer’s range finder can measure greater distances, or the same distance with reduced power consumption;
- triple-cavity design: provides three times the level of optical power compared with a single-cavity design;
- plastic TO package: cost-effective solution for high-volume applications.
“Our technology enhancements make this the highest-quality, highest-efficiency plastic-packaged pulsed laser diode on the market at 905nm, delivering a robust, cost-effective solution for design engineers working with time-of-flight measurements for industrial and consumer distance measurement applications,” claims Denis Boudreau, product leader, Detection, at Excelitas.
Available for purchase now, Generation 2 905nm high-volume pulsed semiconductor laser diodes come standard in a plastic TO package, with future SMD and metal TO iterations available in 2021.
