News: Microelectronics
2 December 2020
Infineon launches first 1200V transfer-molded silicon carbide IPM
Infineon Technologies AG of Munich, Germany has launched a 1200V transfer-molded silicon carbide (SiC) integrated power module (IPM), concluding its massive roll-out of SiC solutions for this year.
The CIPOS Maxi IPM IM828 series is claimed to be the industry’s first in this voltage class. The series provides a compact inverter solution with what is said to be excellent thermal conduction and a wide range of switching speeds for three-phase AC motors and permanent magnet motors in variable-speed drive applications. Among others, these can be found in industrial motor drives, pumps drives and active filters for heating, ventilation and air conditioning (HVAC).
Picture: Infineon’s CIPOS Maxi IPM.
The CIPOS Maxi IPM integrates an improved 6-channel 1200V silicon-on-insulator (SOI) gate driver and six CoolSiC MOSFETs to increase system reliability, optimize PCB size and system costs. The new family member is packaged in a DIP 36x23D housing, making it the smallest package for 1200V IPMs with the highest power density and best performance in its class, it is reckoned. The IM828 series features an isolated dual-in-line molded housing for excellent thermal performance and electrical isolation. It meets EMI requirements and overload protection of demanding designs.
The rugged 6-channel SOI gate driver of the SiC IPM provides built-in dead time to prevent damages from transients. It also offers under-voltage lockout (UVLO) at all channels and over-current shutdown protection functions. With its multi-function pin, the IPM allows high design flexibility for various purposes, says Infineon. Adding to the protection features, the IPM is equipped with an independent UL-certified temperature thermistor. The low-side emitter pins can be accessed for phase-current monitoring, making the device easy to control.
The CIPOS Maxi IM828 series can be ordered now. It comprises 20A IM828-XCC for power ratings of up to 4.8kW.
