News: Microelectronics
18 December 2020
GaN Systems’ 650V E-mode power transistors used in Philips’ 65W charger
GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) says that its power transistors are featured in the new Philips SPS2316G/93, a 2C1A 65W GaN charger, which improves on the prior model (Philips 2C1A 18W) in size, power and charging time.
GaN Systems notes that GaN’s growth in the consumer charger market is being driven by demand for smaller, faster charging, more energy-efficient devices. There are now more than 100 models of GaN chargers and adapters in the marketplace, including the small, lightweight and multi-functional Philips’ SPS2316G/93 2C1A 65W GaN charger.
The new charger includes three AC outlets and three USB ports, eliminating the need for multiple chargers. Performance tests show that it can charge three digital devices simultaneously while also supplying power to three 220V devices, such as speakers, TVs, fans and ultra-high-power chargers, suiting both home use and business travel.
The charger meets high-power needs of multiple device charging in a small form factor of 61mm x 65mm x 65mm (75% smaller than legacy solutions) with a maximum output power of 2500W. USB interfaces support a wide range of voltages and 65W (USB-C) and 60W (USB-A) high-power fast charging protocols.
To achieve high performance and power density, the Philips charger uses GaN Systems’ GS-065-011-1-L 650V E-mode GaN power transistor. The high-performance, low-cost FET is in a small 5mm x 6mm PDFN package and offers low junction-to-case thermal resistance, which results in ultra-high switching frequency and efficiency output. With the GaN Systems EZDrive implementation combined with the ON Semiconductor NCP1342 controller, the charger power design is simplified, a ‘double-drive’ is avoided, and low cost is achieved.
GaN Systems announces 65W QR charger reference design
