EPC showcasing eGaN-based high-power-density DC-DC conversion at PCIM Europe

In Hall 7 (Stand 335) at PCIM Europe 2019 (Power Conversion and Intelligent Motion) in Nuremberg, Germany (7-9 May), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – is exhibiting its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN technology.

Specifically, EPC is demonstrating eGaN devices in several applications including: high-performance 48V DC-DC power conversion for advanced computing and automotive applications, high-power nanosecond pulsed laser drivers for light detection & ranging (LiDAR) used in autonomous vehicles (AVs), multiple-device, large-area wireless power for consumer and industrial applications, and precision motor drives for robotics and drones.

In addition, the EPC team is delivering seven technical presentations on GaN technology and applications:

Seminar: ‘Evolution of GaN FETs from discrete device through power stages’ (6 May, 9am–5pm, Arvena Park Hotel Nuremberg), presenter Michael de Rooij Ph.D.;
Paper - E02-5004: ‘GaN Based High-Density Unregulated 48 V to x V LLC Converters with ≥ 98% Efficiency for Future Data Center’ (7 May, 11:25am, room München 1), speaker Mohamed Ahmed;
‘PSD Panel Session: The Evolution of GaN’ (7 May, 12–1pm, Hall 7, Stand 543), speaker Alex Lidow Ph.D.;
‘Bodo’s Podium: GaN – Devices are Mature’, (8 May, 1–4pm, Hall 7, Stand 543), speaker Alex Lidow Ph.D.;
Paper - A04-4936: ‘Efficiency Optimization in Highly Resonant Wireless Power Systems’ (8 May, 1:30pm, room München 1), presenter Michael de Rooij Ph.D.;
Poster Session: ‘GaN Based High Current Bidirectional DC-DC Converter for 48 V Automotive Applications’ (8 May, 3:15–5:15pm, foyer by NCC Mitte Entrance), presenter John Glaser Ph.D.;
Poster Session: ‘Optimal GaN FET Scaling for Minimal Power Loss in High Step-down Ratio Half Bridge Converters’ (8 May, 3:15–5:15pm, foyer by NCC Mitte Entrance), presenter Jianjing Wang Ph.D.

See related items:

EPC adds 80V eGaN FET to AEC Q101-qualified product family for high-resolution LiDAR

EPC launches 100V eGaN power transistor for 48V DC-DC motor drives and LiDAR applications

Tags: EPC E-mode GaN FETs GaN-on-Si Power electronics

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