EPC launches 100V eGaN power transistor for 48V DC-DC motor drives and LiDAR applications

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has launched the EPC2052, a 100V GaN transistor with a maximum on-resistance (RDS(on)) of 13.5mΩ and a pulsed output current of 74A for high-efficiency power conversion in a small chip-scale package.

Applications demanding higher efficiency and power density no longer have to choose between size and performance, says EPC. Despite the small footprint of just 1.50mm x 1.50mm (2.25mm2), operating in a 48V–12V buck converter, the EPC2052 achieves greater than 97% efficiency at a 10A output while switching at 500kHz and greater than 96% at a 10A output while switching at 1MHz, enabling significant system size reductions. In addition, the low cost of the EPC2052 offers the performance of GaN FETs at a price comparable to silicon MOSFETs, it is rekoned. Applications benefiting from this performance, small size and low cost include 48V input power converters for computing and telecom systems, LiDAR, LED lighting, and Class-D audio.

“The ability of eGaN-based power devices to operate efficiently at high frequency widens the performance and cost gap with silicon,” says CEO Alex Lidow. “The 100V EPC2052 is significantly smaller than the closest silicon MOSFET, and the high-frequency operation allows even further space-savings opportunities to designers,” he adds.

The EPC9092 development board is a 100V (maximum device voltage) half-bridge featuring the EPC2052 and the LMG1205 gate driver from Texas Instruments. The 2” x 2” (50.8mm x 50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the 100V EPC2052 eGaN FET.

The EPC2052 eGaN FET is priced at $0.68 each in 1000-unit quantities and $0.54 each in 100,000-unit quantities, and the EPC9092 development board is priced at $118.75 each.

Tags: EPC E-mode GaN FETs GaN-on-Si Power electronics

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