EPC adds 3.8mΩ eGaN FET to 100V family for 48V DC-DC conversion

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has launched the 3.8mΩ 100V EPC2053 eGaN FET.

The device joins the EPC2045 (7mΩ, 100V), EPC2052 (13.5mΩ, 100V) and EPC2051 (25mΩ, 100V) to offer designers a comprehensive family of 100V GaN transistors suitable for a wide range of power levels and price points to meet the increasing demands of 48V server, 48V automotive and 54V data-center applications. Other applications for the 100V family include single-stage 48V to load open rack server architectures, USB-C, precision motor drives, LED lighting, and LiDAR.

The latest generation of 100V GaN devices increases the efficiency, shrinks the size and reduces system cost for 48V DC-DC power conversion.

“There are very significant performance advantages gained from GaN in 48VIN conversion and this is a market where growth is exploding for multiple applications, such as artificial intelligence (AI), cloud computing, and advanced high-performance motor drives,” says co-founder & CEO Alex Lidow. “In addition, automotive systems are moving from 12V distribution systems to 48V systems to support the emergence of autonomous vehicles with LiDAR, radar, camera and ultrasonic sensors. Our new family of 100V products demonstrate that in all 48V topologies, the highest efficiency and lowest cost is achieved with GaN FETs and ICs.”

In all the topologies with 48VIN, the highest efficiency is obtained using GaN devices due to their lower capacitance and smaller size, says EPC. With recent pricing decreases in GaN power transistors, the cost comparison with equivalent silicon-based converters now strongly favors the use of GaN devices in all leading-edge solutions, it adds.

Achieving up to 97% efficiency, two new reference designs and five demonstration boards are offered to showcase the performance of the latest-generation 100V eGaN FETs.

The EPC9138 demonstration board is a 400kHz switching-frequency, 48VIN, 15A output-current, buck converter featuring the 100V EPC2053. The EPC9141 demonstration board is a 400kHz switching-frequency, 48VIN, 10A output-current, buck converter featuring the 100V EPC2045. Both the EPC9138 and EPC9141 are claimed to beat the best silicon-based solutions in power density and offer exceptional performance, small size and low cost.

Also offered are standard half-bridge development boards available to support easy in-circuit performance evaluation of each of the 100V family devices. The EPC9093 supports the EPC2053, the EPC9078 and EPC9205 support the EPC2045, the EPC9092 supports the EPC2052, and the EPC9091 supports the EPC2051.

All products and boards are available for order from distributor Digi-Key Corp.

See related items:

EPC launches 100V eGaN power transistor for 48V DC-DC motor drives and LiDAR applications

Tags: EPC E-mode GaN FETs GaN-on-Si Power electronics

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