2 September 2015

Toshiba adds 140lm 4A5B-type LEDs to TL1L4 range of high-power white LED range

Tokyo-based Toshiba Corp's Semiconductor & Storage Products Company is now shipping four new products in its TL1L4 series of gallium nitride-on-silicon (GaN-on-Si) high-power white LEDs for LED lighting applications such as street lights, flood lights, LED light bulbs and down-lights.

Available in a 3.5mm x 3.5mm lens-top package, the new 4A5B-type TL1L4 series LEDs achieve a high luminous flux of 140lm (minimum, for a forward current (IF) of 350mA and a junction temperature (Tj) of 85°C, i.e. 'hot binning'), compared to the 130lm (minimum) of conventional general products in the TL1L4 series. The forward voltage (VF) is 2.8V (at IF=350mA, Tj=85°C). At an ambient temperature of 25°C, luminous flux is 165lm.

The four new products are available in correlated color temperatures (CCTs) of 6500K (TL1L4-DW0,L4A5B), 5700K (TL1L4-NT0,L4A5B), 5000K (TL1L4-NW0,L4A5B) and 4000K (TL1L4-WH0,L4A5B), with a color rendering index (CRI) of Ra70.

Toshiba says that the new LEDs make it possible to achieve the market requirements for lighting fixture efficacy of more than 110lm/W (under conditions of 90% driver efficiency and 90% optical efficiency, at a junction temperature of 85°C), and that they can contribute to improving the luminous efficacy and lowering the power consumption of LED lighting.

See related items:

Toshiba boosts high-power white LEDs to 160lm

Toshiba launches ultra-compact 1W GaN-on-Si white LEDs in 3535 lens type package

Toshiba launches second-generation GaN-on-Si white LEDs

Bridgelux sells GaN-On-Si LED technology/chip-related assets to Toshiba as it focuses on lighting products

Toshiba invests in Bridgelux to boost GaN-on-Si LED lighting

Tags: Toshiba GaN-on-Si LEDs

Visit: http://toshiba.semicon-storage.com/ap-en/product/opto/white-led/