4 February 2015

Toshiba boosts high-power white LEDs to 160lm

Tokyo-based Toshiba Corp's Semiconductor & Storage Products business has begun mass production of a new series of high-luminous-efficacy power white LEDs with what is claimed to be industry-leading luminous flux of 160-170lm for room-temperature operation.

Using gallium nitride on silicon (GaN-on-Si) technology developed for LED lighting, the 3.5mm x 3.5mm lens-package TL1L4 series achieves high luminous efficacy of typically 160lm/W, with a correlated color temperature (CCT) of 5000K and Ra=70 at a forward current (IF) of 350mA operating at room temperature (Ta=25℃). At an ambient temperature of Ta=85℃, operating current can be driven to 1A (a junction temperature Tj of <150℃), and the luminous flux is improved by more than 60% over Toshiba's existing TL1L3 series, contributing to improvements in luminous efficacy and lower power consumption for LED lighting.

The absolute maximum forward current is 1.5A at Ta<55℃ (Tj<150℃). Color options spans nine color temperatures, from 2700K to 6500K. Hot binning tests for electrical and optical characteristics at IF=350ｍA and Tj=85℃ simulate real-life operating conditions.

Applications include LED light bulbs, base lights, down lights, street lights and floodlights. 

See related items:

Toshiba launches ultra-compact 1W GaN-on-Si white LEDs in 3535 lens type package

Toshiba launches second-generation GaN-on-Si white LEDs

Bridgelux sells GaN-On-Si LED technology/chip-related assets to Toshiba as it focuses on lighting products

Toshiba invests in Bridgelux to boost GaN-on-Si LED lighting

Tags: Toshiba GaN-on-Si LEDs

Visit: http://toshiba.semicon-storage.com/ap-en/product/opto/white-led/wled-lineup.html