4 April 2011

Fox signs fifth license for its SiC patents

The Fox Group Inc of Warrenton VA, USA has entered into a license agreement with a non-US company for rights to patents its portfolio.

This is the fifth non-exclusive and royalty-bearing license agreement that Fox Group has signed for its patents related to silicon carbide (SiC), following the fourth (with a US corporation) just in February and the third (with the Wide Bandgap Materials group of II-VI Inc’s compound semiconductor business, which manufactures single-crystal silicon carbide (SiC) substrates) in August 2008. Details of the latest patent license were not disclosed.

Founded in 1999, Fox Group is a privately held corporation with technology and patents related to silicon carbide and to high-purity, epitaxial crystal growth for LEDs and lasers.

“Fox Group’s key patents are for silicon carbide with low defect density, and our successful licensing activities confirm the value of our intellectual property,” says president & CEO Barney O’Meara. “Non-exclusive licenses remain available, and we look forward to the balance of the industry taking licenses,” he adds.

Silicon carbide is used in the production of high-performance power semiconductor devices and optoelectronics such as LEDs, lasers, RF transistors, detectors, MOSFETs, HEMTs, JFETs, BJTs, and Schottky barrier and PIN diodes. It is expected to play an increasingly important role in higher-efficiency power conditioning systems for electric vehicles, photovoltaics, wind, and other renewable energy sources.

See related items:

Fox Group signs fourth license for its SiC patents

Tags: The Fox Group SiC

Visit: www.thefoxgroupinc.com

Join Semiconductor Today's LinkedIn networking and discussion group