14 February 2011

Fox Group signs fourth license for its SiC patents

The Fox Group Inc of Warrenton VA, USA has entered into a license agreement with an unnamed US corporation for rights to patents in its portfolio. This is the fourth non-exclusive and royalty-bearing license agreement that Fox Group has signed for its patents related to silicon carbide (SiC), following the third — with the Wide Bandgap Materials (WBG) group of II-VI Inc’s compound semiconductor business, which manufactures single-crystal silicon carbide (SiC) substrates — in August 2008.

Founded in 1999, Fox Group is a privately held corporation with technology and patents related to silicon carbide and to high-purity, epitaxial crystal growth for LEDs and lasers.

“Fox Group’s key patents are for silicon carbide with low defect density, which is especially desirable for high-power semiconductor devices, and LEDs, lasers, and RF devices as well,” says president & CEO Barney O’Meara. “At this time non-exclusive licenses are still available to companies in the silicon carbide industry worldwide,” he adds. “Since Fox Group is not making silicon carbide wafers or devices, we wish for the public to benefit from the Fox Group technology by the entire industry licensing our patents.”

Silicon carbide is used in the production of high-performance power semiconductor devices and optoelectronics such as LEDs, lasers, RF transistors, detectors, MOSFETs, HEMTs, JFETs, BJTs, and Schottky barrier and PIN diodes. It is expected to play an increasingly important role in higher-efficiency power conditioning systems for electric vehicles, photovoltaics, wind, and other renewable energy sources.

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