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9 February 2010
New SiC and GaN power devices pave the way to a $160m market by 2013
Market analyst firm IMS Research says that in 2009 the only commercially available silicon carbide (SiC) power devices were SiC Schottky diodes and SiC JFETs. However, in 2010, the market will change with the introduction of Cree’s SiC MOSFET, and International Rectifier’s gallium nitride (GaN)-based power device platform. Furthermore, several companies are aiming to release GaN Schottky diodes, says the IMS report, "The World Market for SiC & GaN Power Semiconductors – 2010".
According to the report, the SiC & GaN power device market will be worth over $160m by 2013. SiC Schottky diodes are forecast to account for almost one third of the total market, with the bulk of revenues attributed to PFC power supplies.
“The next three years will be an important stage in the development of the SiC and GaN power device market. Applications other than PFC power supplies are forecast to begin to adopt these new power devices and other established power semiconductor suppliers have indicated they will be introducing new SiC and GaN power devices to the market in the near future,” says Josh Flood, research analyst at IMS Research.See related items:
Cree and Powerex develop 1200V, 100A SiC MOSFET-based power switch modules for military systems
International Rectifier launches GaN-on-Si power device technology
Search: SiC power devices GaN power devices GaN SiC
Visit: www.irf.com
Visit: www.cree.com
Visit: www.imsresearch.com
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