News

11 June 2009

 

Toshiba adds PAE-enhanced GaAs FETs for microwave radios, solid-state power amplifiers, and block up-converters

Toshiba expands C-band GaAs FET lineup with PAs optimized for PAE for microwave radios and SSPAs

At this week’s 2009 IEEE MTT-S International Microwave Symposium (IMS) in Boston, Toshiba America Electronic Components Inc (TAEC) of Irvine, CA, USA and its parent company Toshiba Corp announced the expansion of its gallium arsenide field-effect transistor (GaAs FETs) lineup with samples of three new 24V devices optimized for enhanced power-added efficiency in microwave radios and solid-state power amplifiers (SSPAs).

Two new extended C-band GaAs FETs for microwave digital radios supporting point-to-point and point-to-multipoint terrestrial communications operate in the 5.85-6.75GHz range. The TIM5867-8UL has an output power at 1dB gain compression point of 8W (or 39.5dBm), linear gain of 10dB and power added efficiency of 36%. The TIM5867-30UL has an output power at 1dB gain compression point of 30W (45dBm), linear gain of 10dB, and power efficiency of 41%.

For satellite solid-state power amplifier (SSPA) applications, Toshiba has added the 60W TIM7785-60UL C-band GaAs FET power amplifier, which operates in the 7.7-8.5GHz range and has an output power at the 1dB gain compression point of 48dBm, gain of 7.5dB and power efficiency of 36%.

“Toshiba has a broad power GaAs FET product family to support extended C-band, but many customers have asked us to upgrade the family using the latest process technology,” says Homayoun Ghani, business development manager, Microwave, Logic and Small Signal Devices, in TAEC's Discrete business unit. “High gain and high power added efficiency features will help designers build energy-efficient microwave radios,” he adds.

“One of the design challenges with 7-8GHz SSPAs has traditionally been that they sometimes have a lower device gain compared to 5-6GHz parts, so designers could not use the same lineup for 7-8GHz power amplifiers as they do for lower frequency amplifiers,” says Ghani. The TIM7785-60UL offers 7.5dB of G1dB, which is a 1.5dB improvement over Toshiba's previous 60W product in that band. “The improved gain will help microwave designers reduce the number of parts in their overall system,” he adds.

High-gain, high-PAE X- and Ku-band GaAs FETs for microwave radios and block up-converters

Toshiba has also expanded its GaAs FETs lineup with samples of three new power-added-efficiency enhanced GaAs FETs targeted at microwave radios and block up-converters (BUCs).

For microwave digital radios supporting point-to-point and point-to-multipoint terrestrial communications, the TIM1011-8ULA X-band GaAs FET operates at 10.7-11.7GHz, and has output power at the 1dB gain compression point of 8W (or 39.5dBm), linear gain of 9dB and power added efficiency of 39%. Toshiba launched the similar TIM1011-8UL in 2008, but the new device is in a 2-11C1B package in order to support existing customers using legacy products.

For Ku-band, the TIM1213-8ULA (operating at 12.7-13.2GHz) is targeted at microwave radios for microwave links and the TIM1314-15UL (operating at 13.75-14.5GHz) is optimized for satellite block up-converter (BUCs) applications, for very small aperture terminals (VSAT) and solid-state power amplifiers (SSPAs). The TIM 1213-8ULA has output power at the 1dB gain compression point of 8W (or 39.5dBm), gain of 8dB and power efficiency of 35%. The TIM 1314-15 UL has output power at the 1dB gain added compression point of 15W (or 42dBm), gain of 7dB and power added efficiency of 32%.

“Following the launch of our ‘UL’ power-added-efficiency enhanced 2W and 8W devices for X-band in 2008, Toshiba is expanding the product family with another X-band amplifier as well as two long-awaited devices in the Ku-band frequency range,” says Ghani. “With energy-saving features associated with higher gain, we believe that these amplifiers will help our customers design more advanced telecommunication systems.”

See releted items:

Toshiba expands GaN HEMT family with PAs for C- & Ku-band satcom and X-band industrial applications

Toshiba adds PAE-enhanced GaAs amplifiers for satcom and microwave radio plus GaN HEMTs for Ku- and X-bands

Search: Toshiba GaAs FETs

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