News

9 June 2009

 

Toshiba expands GaN HEMT family with PAs for C- & Ku-band satcom and X-band industrial applications

At this week’s 2009 IEEE MTT-S International Microwave Symposium (IMS) in Boston (7-12 June), Toshiba America Electronic Components Inc (TAEC) of Irvine, CA, USA and its parent company Toshiba Corp are announcing the addition of three new 24V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) to its power amplifier product family.

The TGI 7785-120L, Toshiba’s first commercial C-band GaN HEMT for satellite communication applications, operates at 7.7-8.5GHz with output power of 120W. Featuring output power of 51dBm with 44dBm input power, linear gain of 11dB and drain current of 10A, the device enables increased output power and helps to reduce size and weight in solid-state power amplifiers (SSPA) for satcom applications, says Toshiba.

“We believe this is the highest-output-power internally matched GaN HEMT in this band that is commercially available,” says Homayoun Ghani, business development manager Microwave, RF and Small Signal Devices in TAEC’s Discrete business unit. “Its 120W output power is nowhere near the limit of GaN technology, as we expect to be able to double or even quadruple this output power in the future,” he adds.

Toshiba is also unveiling the extended Ku-band TGI1314-50L, which operates at 13.75-14.5GHz with output power of 50W. Featuring output power of 47dBm with 42dBm input power, linear gain of 8dB and drain current of 5A, targeted satcoms applications include high-power solid-state power amplifiers (SSPA) and block up converters (BUC) for very small aperture terminals (VSAT). Previously, in 2008, Toshiba launched the 14-14.5GHz Ku-band TGI1414-50L GaN HEMT for satcoms (now in mass production).

The new X-band TGI1011-50-771 operates at 11.3-11.5GHz with output power of 50W. Featuring output power of 47dBm with 41dBm input power, linear gain of 9dB and drain current of 5A, targeted industrial applications include exciters for particle accelerators.

“Toshiba’s first commercial GaN power amplifier has been in volume production since 2008 and this technology presents superior device performance such as high gain and efficiency in satcom and radar market,” says Ghani. “Toshiba is exploring new markets for this technology. Exciters for particle accelerators are a good example of non-telecommunication and non-radiolocation applications for these power amplifiers,” he adds. “Toshiba will continue its efforts to develop additional GaN devices in other bands with higher output power.”

Samples of the devices are available now, with mass production of the TGI7785-120L scheduled for third-quarter 2009.

See releted items:

Toshiba adds PAE-enhanced GaAs amplifiers for satcom and microwave radio plus GaN HEMTs for Ku- and X-bands

Toshiba presents GaN power FET with record Ku-band output power

Search: Toshiba GaN HEMTs

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