News

19 June 2009

 

Plasma Etch launches high-rate RIE version of plasma system

Plasma Etch Inc of Carson City, NV, USA has launched a high-rate reactive ion etching (RIE) version of its BT1 plasma system.

The BT1-RIE is suited to fast anisotropic removal of photo-resist, nitrides, oxides, polyimides and even diamond-like carbon (DLC) films, and is offered with a unique water-cooled RIE electrode for processing multiple substrates up to 1 foot square per load cycle.

The system uses a 1250W 13.56MHz RF power supply with automatic matching for high rate etching capability. Two mass flow controllers for two gases are provided as standard, with options for a total of up to four gas channels. The system is completely PLC controlled, using a color touch-screen display for user configuration setup and operation. Up to 20 complete process sequences can be stored and dual steps can be programmed for automatic processing. Two-stage vacuum pumping is included, with blower packages optional for high throughput.

Picture: Plasma Etch's high-rate RIE version of its BT1 plasma system.

Applications include medical devices, solar cells, optics, printed-circuit boards, connectors, micro-electro-mechanical systems (MEMS), and wafer-level packaging.

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Plasma cleaning and contamination removal system

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Visit: www.plasmaetch.com