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Molecular beam epitaxy (MBE) equipment maker Riber of Bezons, France says that it has installed its new MBE49GaN system (capable of handling multiple 100mm wafers or one 200mm wafer) at an unnamed industrial site, where it is undergoing production qualification.

According to Riber, the MBE49GaN is the world's first MBE production machine capable of producing GaN-based electronic components, and is the result of R&D conducted with CNRS.

Riber developed its GaN processes at the joint Riber/CNRS laboratory in Sophia-Antipolis, France. Using a Riber Compact21GaN system, the lab works on two main processes:

• Radio-frequency (RF) components, such as high-electron-mobility transistors (HEMTs).
• Optoelectronic devices, such as LED or lasers.

The research into RF devices enabled state-of-the-art performance to be achieved for HEMT processes, says Riber, which led to the technical specifications of the MBE49GaN. The laboratory's research into optoelectronic devices is carried out as part of a research program founded by ANR (Agence National de la Recherche). The DEMONI project started at the beginning of 2007, focused on developing a process to produce white monolithic LEDs. In addition to its R&D work, the laboratory is used for demonstrating GaN processes to Riber's customers.

"With this new advance, we have all the R&D resources, the applications, and the epitaxy machines to assist our customers in progressing more rapidly in their research work, or to penetrate new applications," says Riber's chairman Michel Picault.

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