Home | About Us | Contribute | Bookstore | Advertising | Subscribe for Free NOW! |
News Archive | Features | Events | Recruitment | Directory |
Learn more about R&D chemical mechanical polishing by requesting our FREE informational CD.
FREE subscription |
Subscribe for free to receive each issue of Semiconductor Today magazine and weekly news brief. |
NXP Semiconductors of Eindhoven, The Netherlands (formerly Philips Semiconductors until September 2006) has launched the first of a series of silicon-based discrete solutions with the release of the BFU725F microwave NPN transistor. The new device combines high switching frequency (70GHz), high maximum stable gain (27dB at 1.8GHz/10dB at 18GHz), and very low noise (0.43dB at 1.8GHz/0.7dB at 5.8GHz), suiting a variety of RF applications. Packaged in a plastic surface-mount package SOT343F, the BFU725F is available now for shipping in high volumes.
The ultralow noise figure improves the reception of sensitive RF receivers in various wireless devices (such as GPS systems, DECT phones, satellite radio, WLAN/CDMA applications) and the high cutoff frequency is suited to meeting the needs of applications that operate in the 10-30GHz range (such as satellite low-noise blocks).
Developed to address both the performance needs of existing devices and the cost concerns of producers, the BFU725F was developed using NXP’s proven QUBiC4X silicon germanium carbon (SiGe:C) process technology for discrete components (the same process used to develop monolithic ICs and wideband transistors).
Other solutions already on the market include the TFF1004HN, a highly integrated IC for satellite LNBs (low-noise block downconverters), and the BFU725F microwave transistor. NXP is developing several more silicon-based wideband transistors and monolithic microwave integrated circuits (MMICs) that are due for launch later this year and in early 2008.
“QUBiC4X was designed specifically to meet the needs of real-life, high-frequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range”, claims professor Bart Smoulders, NXP’s innovation manager. “The idea is to have a silicon-based process with the performance of gallium arsenide technologies, so we can provide cost-effective integrated high-frequency solutions”.
See related item:
Anadigics ships dual-band 802.11n PA to NXP for WLAN module
Search: NXP Silicon germanium
Visit: www.nxp.com