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For its fiscal second-quarter 2008 (ended 28 September 2007), Advanced Photonix Inc of Ann Arbor, MI, USA has reported revenue of $6.5m, up 6% last quarter and 11% on $5.9m a year ago.

Net loss was $1.9m, up from $1.1m a year ago. However, EBITDA (earnings before interest, taxes, depreciation, and amortization) was $15,000, compared to a net loss of $5,000.

Products of the vertically integrated optoelectronics manufacturer include patented silicon, indium phosphide and gallium arsenide based APD, PIN, and FILTRODE photodetectors; high-speed optical receivers; and the T-Ray 2000 and QA1000 THz terahertz instrumentation platforms.

Telecom revenues were $1.6m, up 26% on last quarter but down 10% on a year ago. Medical revenues were $1.4m, up 183% on $481,000 a year ago, due to accelerated end-of-life purchases by a customer (expected to be completed by the end of fiscal 2008). Industrial Sensing/NDT (non-destructive testing) revenues were $2.6m, up 9%, due mainly to increased Terahertz product platform sales to the NDT sector. Military/aerospace revenues were $950,000, up 9% on last quarter but down 17% on a year ago.

“The private placement totaling over $4.4m that we completed during the second quarter [in September] improved our balance sheet and will provide additional funds to help us grow future revenues and earnings,” says chairman and CEO Richard Kurtz. “We continue to experience high-level design activity in our high-speed optical receiver (HSOR) product platform, particularly in the more rapidly developing 40G deployment in the telecom industry, and we remain very bullish about the growth prospects of our HSOR products,” he adds. “Finally, we are successfully dealing with the challenges of the wafer fabrication and assembly consolidation, which should be resolved by the year end, which will result in significant cost savings and position us solidly for the future.”

Advanced Photonix completed its new multi-million dollar, 5000ft2 microfabrication facility for R&D and manufacturing of optoelectronic devices in June. The facility upgrades and consolidates the firm’s two microfabrication operations in Camarillo, CA and Dodgeville, WI, which produced silicon photodiodes in PIN, large-area APD (LAAPD) and FILTRODE configurations, into one centralized facility at its subsidiary Picometrix LLC in Ann Arbor (acquired in 2005) which, since 1992, has used MBE to produce standard and customized InGaAs and InP high-speed optical receivers in APD and PIN configurations (currently with bandwidths of 2-60GHz and wavelengths of 700-1650nm for 10-40Gbps applications).

See related items:

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Advanced Photonix opens consolidated silicon and III-V opto fab

Visit: www.advancedphotonix.com