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The technology programme of the UK government’s Department of Trade and Industry (DTI) has awarded a UK-based consortium a three-year contract worth just under £3m ($5.94m) to demonstrate high-quality gallium nitride-based LEDs on 150mm (6”) silicon substrates. The ultimate goal of the project is to enable large-scale production of low-cost LED lamps for solid-state white lighting.
Currently, a major barrier to using LEDs is the relatively high cost and low yield. So, the project aims to reduce costs and improve consistency by applying mature large-scale semiconductor processing methods (proven in volume production) to grow GaN-based light-emitting structures on large-diameter silicon substrates.
The project partners therefore combine expertise in commodity III-V semiconductor manufacturing with capabilities for GaN growth, fundamental science, and expertise in packaging and LED marketing :
The partners add that the project should provide not only a dramatic step forward on the solid-state lighting roadmap but also a route for the UK to enter what it deswcribes as a major future market.
See related items:
BluGlass produces first blue light emission from GaN on 6” glass wafer
LED market drives Rubicon to expand sapphire substrate capacity
UCSB achieves high-efficiency non-polar GaN LEDs at improved output power
Panasonic launching first white LED using GaN substrate
Aonex and Kyma collaborate to cut blue laser and LED substrate costs
Cermet licenses phosphor-free GaN-on-ZnO white LED technology from Georgia Tech
Shimei to produce GaN-on-silicon LEDs for blue, then green and red emission; developing blue lasers
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