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RF Micro Devices Inc of Greensboro, NC, USA says that it has started shipping its RF3822 28V, 10W GaN PowerIC broadband power amplifier (part of its RF382X product family) to a top-tier military supplier.

In January, the same top-tier military supplier gave RFMD a purchase order for its RF3825 28V, 10W GaN PowerIC broadband power amplifier (which has been demonstrated operating over a frequency of 225-1800MHz at this week’s IEEE MTT-S International Microwave Symposium 2007 event in Hawaii).

The RF3822 is optimized for high efficiency with 16dB gain over a very wide operating bandwidth of 0.1-1GHz in a 50 ohm impedance environment and is suited to multiple-band and broadband applications. Using advanced heat sink and power dissipation technologies, the RF3822 is packaged in a low-cost, surface-mountable aluminum nitride package that is footprint-compatible with industry-standard SOIC-8 packages.

These first shipments demonstrate the increasing customer interest that RFMD is receiving in its GaN technology and associated GaN product portfolio, says Jeff Shealy, VP of RFMD’s infrastructure product group. “RFMD continues to attract very favorable customer interest from new and existing customers in multiple growth markets, including military communications, wireless infrastructure, public mobile radio, general purpose amplifiers and high power radar,” he adds.

According to Asif Anwar, director of the Strategy Analytics GaAs and Compound Semiconductor market research service, “Gallium nitride transistors and ICs from RFMD and a few other suppliers will capture a significant share of the $720m+ per year market for power amplifiers for 3G and WiMAX infrastructure, as well as a share in military and defense applications that require semiconductors with high RF output power and high efficiency with high bandwidth."

See related item:

RFMD receives first order for its GaN PAs

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