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News

17 April 2007

 

University begins operating newly installed Thomas Swan CCS system for GaN/ZnO production

Germany’s Institute of Semiconductor Technology, part of the University of Braunschweig, has installed and is operating a new Thomas Swan (3x2” wafer configuration) Close Coupled Showerhead (CCS) MOCVD reactor supplied by Aixtron AG of Aachen, Germany. The reactor will be used to produce gallium nitride (GaN) and zinc oxide (ZnO) epitaxial materials for research and optoelectronic development.

ZnO is an attractive material for short wavelength and UV light emitters such as LEDs, lasers, and for light detectors. As a substrate, the material is transparent and conducting, which should enable it to produce brighter LEDs than those manufactured on silicon carbide or sapphire substrates. Furthermore, when doped with magnesium, it is possible to produce devices operating in the deeper UV region, for applications such as solar blind detectors.

"Thomas Swan’s CCS technology was chosen because the capabilities of the Thomas Swan system are well-suited to our needs for material uniformity, thickness, doping, and composition,” said Prof. Dr. Andreas Waag, director of the Institute of Semiconductor Technology. “We have been very satisfied with the performance of our existing Aixtron systems. Now we require the newest generation of MOCVD processes for even more sophisticated optoelectronics and nanostructures.”

The university is already operating an Aixtron AIX 200 MOCVD system.

See related item:

Cermet licenses phosphor-free GaN-on-ZnO white LED technology from Georgia Tech

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