News

8 June 2006

 

New product flurry from WJ Communications

WJ Communications Inc, San Jose, USA, has launched several new products for RF wireless applications.

28V InGaP HBT

For mobile infrastructure power amplifier applications, the new 28V InGaP HBT is said by the company to provide significant advantages in power output and efficiency compared to other technologies on the market. The 28V process was developed from the company’s existing 5V InGaP HBT process. Several new products using the 28V process are in development and will be released in Q3, 2006.

"We are very excited about the development of this new 28V InGaP HBT process. It offers significantly improved ACPR/ACLR performance at equivalent or higher efficiencies than LDMOS products that are currently on the market," said Morteza Saidi, VP of engineering for WJ Communications. "Units can be operated as Class B amplifiers and still achieve very low ACPR/ACLR performance as the result of unique circuit design techniques (patent pending). Initially we are planning to introduce several products up to 10W P1dB; this technology is suitable for products with higher power as well."

Lifetime tests have been run for over 4000 hours at 315 C junction temperature with minimal beta degradation, and the process is capable of handling up to 6 dB overdrive on the input without failure, say the company.

WJ Communications has also developed a new surface mountable power QFN package for these InGaP HBT products that incorporates a eutectic die attach for the semiconductor die to minimize thermal resistance.

AP512 and AP513

Both of the new 8W power amplifiers, the AP512 for UMTS and the AP513 for DCS requirements, exhibit high linearity and are ideal for CDMA and W-CDMA applications for which low adjacent channel power is critical. According to the company, both devices are ideal as drivers for mobile infrastructure power amplifiers or as output stages in repeaters.

Haresh Patel, senior VP of sales and marketing for WJ Communications, said: "These devices exhibit exceptionally low ACPR/ACLR with good efficiency for demanding power amplifier applications. In addition, the bias is adjustable from Class AB to Class B operation so the designer can optimize the performance for a specific requirement. These devices are self contained with all bias, thermal control and matching circuits included, making them easy to design into a particular application."

The AP512 is a three-stage amplifier that operates over the 2110-2170 MHz frequency range and features output IP3 of 53 dBm, 28 dB power gain, and a P1dB of 39 dBm. It is housed in a RoHS compliant, 13 x 29 x 4.1 mm flange mount package and operates from +12V at 1.72A operating current when configured for Class AB operation. No negative voltage is required for proper operation.

The AP513 operates over the 1805-1880 MHz frequency range, and features output IP3 of 50 dBm, 30 dB power gain, and a P1dB of 39 dBm. It is housed in the same package as the AP512 and operates from +12V at 1.67A when configured for Class AB operation.

Using the AP512 as a driver amplifier, it is capable of providing +28 dBm W-CDMA power output with an ACLR of -56.5 dBc at +/-5 MHz offset. As an output amplifier, the AP512 will provide +31 dBm at -45 dBc ACLR. Additionally, the AP513 will provide +28 dBm CDMA2000 (7 carrier) power output with an ACPR of -64 dBc at +/-885 KHz offset when configured as a driver amplifier and +32 dBm power output as an output amplifier with ACPR of -45 dBc. Both feature a power down mode using a simple +5V control line.

VG112 variable gain amplifier (VGA)

The new VG112 variable gain amplifier (VGA) is a 1-watt, very low distortion, variable gain amplifier optimized for various current and next generation wireless technologies such as GPRS, GSM, CDMA, TD-SCDMA and W-CDMA, for which high linearity and high power are required.

"By leveraging our expertise in InGaP/GaAs HBT technologies, we've integrated a PIN diode attenuator with a two-stage 1W amplifier in a single and easy-to-use QFN module, thereby offering our customers very low distortion over the full, 28 dB attenuation range, a 70% reduction in board space, and 25% fewer tuning components compared to other competing technologies," said Ron Buswell, senior VP of product line management and marketing for WJ Communications.

The VG112 is housed in a low-cost SMT lead-free/green/RoHS-compliant, 6x6 mm QFN package. It operates over the 1800-2200 MHz frequency range, featuring 23 dB gain, +46 dBm OIP3, and +30 dBm of compressed 1-dB power using a single +5V supply voltage. The internal attenuation stage provides 28 dB of gain variation range and is controlled by a 0-4.5V control voltage.

It is capable of providing +23.5 dBm power output for an IS-95A signal at -45 dBc ACPR when operating at 1960 MHz. For W-CDMA the power output is +21 dBm with -45 dBc ACLR when operating at 2140 MHz. A key feature of the device is its ability to maintain high linearity at any gain state over its entire attenuation range, say the company.

Capable of operating over the -40 to +85 C temperature range, the VG112 achieves in excess of 1M hours MTTF at +85 C. It is also has an ESD rating of Class 1B (HBM per JEDEC Standard JESD22-A114) and a Level 2 MSL rating at +260 C per JEDEC Standard J-STD-020.

ML401 and ML501 mixers

WJ Communications Inc’s new ML401 and ML501 mixers include integral LO amplifiers, and are designed for wireless base-station or repeater applications, that feature the combination of low input power and high dynamic range. Applications include various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, WiMax and Wi-Bro, where high linearity and low LO input power are required.

The ML401 is a high linearity mixer with an integral LO amplifier, housed in a SOIC-8 lead-free/green/RoHS-compliant package. The mixer provides +30-32 dBm Input IP3 with an overall conversion loss of 8.0 dB. This device operates over the 1700-2200 MHz RF frequency band with an LO frequency range of 1550-2150 MHz and an IF frequency range of 50-250 MHz. The ML401 operates from a bias supply of +5V at 110 mA and features VSWRs better than 2:1 on all ports.

The ML501 operates over the RF frequency band of 1900-2700 MHz with an LO frequency band of 1600-2500 MHz and an IF frequency range of 50-500 MHz.

Capable of operating over the -40 to +85 C temperature range, the ML401 and ML501 achieve in excess of 1M hours MTTF at +85 C. They both have an ESD rating of Class 1B (HBM per JEDEC Standard JESD22-A114) and a Level 2 MSL rating at +260 C per JEDEC Standard J-STD-020.

CV221-2A dual channel RF converter

The new CV221-2A dual channel RF converter is designed for wireless base-station or repeater applications that feature the combination of low bias current and high dynamic range. Applications include various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, and Wi-Bro, where high linearity and low bias power are required.

"By leveraging our expertise in multi-chip module technology we have integrated GaAsFET and InGaP HBT devices to create a dual channel converter in a small QFN package that provides customers with an easy-to-use product offering a 40% reduction in cost, 60% reduction in circuit board space, and 25% fewer tuning components compared to discrete component solutions," said Morteza Saidi, VP of engineering for WJ Communications.

The CV221-2A is a high linearity, dual channel converter with integral LO and IF amplifiers, housed in a low-cost SMT lead-free/RoHS-compliant 6x6 mm QFN package. The down converter provides +28 dBm Input IP3 with an overall gain of 9.2 dB for either channel when operating from a +5V supply at 315 mA bias current and an LO input power of 0 dBm. This device operates over the 1900-2400 MHz RF frequency band with an LO frequency range of 1600-2335 MHz and an IF frequency range of 65-300 MHz.

The branch-to-branch isolation is typically 45 dB with port-to-port isolation rated at 12 dB LO-RF and 26 dB LO-IF. The CV221-2A also has better than 2:1 VSWR for each RF, IF, and LO ports. Furthermore, the gain variation over the -40 to +85 C temperature range is typically +/- 0.6 dB. The use of an integrated dual stage LO amplifier allows for stable performance across a wide range of LO power levels. By keeping each branch and internal components isolated from each other, the converter can be used for both upconverting and downconverting applications.

Capable of operating over the -40 to +85 C temperature range, the CV221-2A achieves in excess of 1M hours MTTF at +85 C. It is also has an ESD rating of Class 1B (HBM per JEDEC Standard JESD22-A114) and a Level 2 MSL rating at +260 C per JEDEC Standard J-STD-020.

Visit: http://www.wj.com