News

4 June 2006

 

TDI scores first 4-inch AlN SI substrate for III-nitrides

Technologies and Devices International Inc (TDI) has fabricated what it claims to be the first 4-inch diameter AlN-based semi insulating (SI) substrate for group-III nitride semiconductor devices.

Applications for the new substrates include ultra high power AlGaN/GaN devices, such as high electron mobility transistors (HEMTs) and high frequency power amplifiers for wireless communications. Optoelectronic applications include high power blue and ultra violet (UV) light emitters, laser diodes (LDs) and light emitting diodes (LEDs).

The prototype substrate consists of single crystal AlN film deposited on a conductive 4-inch silicon carbide (SiC) substrate. Novel AlN-on-SiC substrates offer a good lattice and thermal match to GaN-based devices and combine the thermal conductivity of SiC and high intrinsic electrical resistivity of AlN. At approximately 10 microns thick, the AlN film provides reliable insulation and low current leakage for high frequency devices.

Until now only 3-inch SI substrates with high thermal conductivity have been commercially available for the fabrication of power GaN-based RF devices. TDI claims that the introduction of 4-inch wafers will reduce device production costs by utilizing larger substrate area and the 4-inch device processing lines used for GaAs and other RF semiconductors.

TDI’s president and CEO, Vladimir Dmitriev said: "Development of 4-inch semi insulating substrates for high power GaN-based HEMTs has a long history and we are pleased to inform nitride community and especially our customers that the first prototype of AlN-based 4-inch substrate has been fabricated. The prototype was fabricated using proprietary stress control technology and crystal growth equipment developed by TDI for deposition of thick crack free AlN films."

Pilot production of the new substrates is planned in the next few months, with shipping due to begin in Q4, 2006.

Visit: http://www.tdii.com

Contact: welcome@tdii.com