News

13 June 2006

 

Military and HPE applications drive GaN market through to 2010

A new study from market analysts Strategy Analytics, "Gallium Nitride Markets: Commercial Markets Drive Power Electronics," reports that military and High Power Electronic (HPE) applications will drive the development of the GaN device market through to 2010. The study also notes that commercial wireless infrastructure applications will be a market driver for GaN, forecasting that the total market for GaN microelectronic devices will grow at a CAGR of 151% through 2010.

"The military and high power electronics markets both have future needs that will make use of the advantages offered by wide bandgap materials such as GaN; and this will help the developing GaN device market," said Asif Anwar, director of the Strategy Analytics GaAs service. "On the other hand, the needs of the commercial telecommunications wireless market have yet to really place the incumbent technologies, Si LDMOS and GaAs pHEMT under major competitive strain although GaN will start to penetrate these markets over the next few years regardless."

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