News

6 June 2006

 

RFMD showcases GaN HEMT line-up

RFMD will give a live demonstration of its gallium nitride (GaN) High Electron Mobility Transistor (HEMT) high-power transistor line-up for UMTS and will also display its latest performance results for WiMAX applications at the IEEE MTT-S International Microwave Symposium in San Francisco, on June 13-15.

RFMD’s demonstration will feature the new GaN HEMT high-power transistor line-up deployed in a digital pre-distortion system. Digital pre-distortion improves the linear efficiency performance of the high power transistor line-up with error correction for wireless infrastructure applications. The latest performance data for drain efficiency; saturated power output; gain; and linearity will be provided.

As well as the demonstration of its new products, RFMD will present two papers on GaN technology at the event:

• "Performance and RF Reliability of GaN-on-SiC HEMTs Using Dual-Gate Architectures", Rama Vetury

• "Linearity and Efficiency Performance of GaN HEMTs with Digital Pre-Distortion Correction", Matthew Poulton.

Visit: http://www.rfmd.com

Event: http://www.ims2006.org