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9 June 2006
Microsemi’s silicon carbide on show
Microsemi Corporation will demonstrate its next-generation wide-bandgap silicon carbide (SiC) technology at the 2006 IEEE MTT-S International Microwave Symposium and Exhibition in San Francisco, June 13-15. Visitors to Microsemi’s booth will get a first look at the SiC RF power transistors for pulsed applications.
Also on show are Microsemi’s high voltage PIN switching diodes for microwave and RF application and the latest HBT InGaP power amplifiers for IEEE 802.11a/b/g wireless LAN applications.
Visit: http://www.microsemi.com
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