News

1 August 2006

 

Mitsubishi launches high-gain, low-noise GaAs HEMT for DBS/VSAT

Tokyo-based Mitsubishi Electric Corp says it has developed a high-gain version of a micro-X package GaAs high electron mobility transistor that is suitable for low-noise amplifiers in the receivers of 18-20GHz Ka-band direct broadcast satellite (DBS) and very small aperture terminal (VSAT)
systems.

The recent launch of 20GHz(down link)/30GHz(up link) (Ka-band) systems is expected to increase demand for HEMTs, due to the expansion of transmission capacity in current satellite communication systems with the development of
high-speed data links and digital/high-definition roadcasts, says Mitsubishi Electric. The market is demanding low price and high-gain/low-noise characteristics at high frequencies for Ka-band systems, the company adds.

By optimizing the package structure for Ka-band frequencies, at 20GHz (typical) Mitsubishi Electric's MGF4961B HEMT has an associated gain (Gs) of 13.5dB (3dB better than previous HEMTs) and a noise figure (NFmin.) of 0.7dB. However, an unchanged foot pattern from previous HEMTs will make new product substitution easy, the firm says, enabling an improvement in the
cost performance of satellite communication equipment. Samples cost $0.90. Shipments will begin in October, with a capacity of 500,000 per month.


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