Transphorm adds first PQFN88-packaged GaN FETs to Gen III product line

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified high-voltage (HV) gallium nitride (GaN) field-effect transistors (FETs) for high-voltage (HV) power conversion applications — has announced its first Gen III PQFN88 transistors. The new 650V devices are available in two versions, the TP65H070LSG (source tab) and TP65H070LDG (drain tab), and offer an on-resistance of 72mΩ.

Transphorm claims that its Gen III devices (launched in June 2018) came onto the market as the highest-quality, highest-reliability [Q+R] GaN FETs available. They pair a custom-designed low-voltage MOSFET with the GaN FET to offer:

quieter switching;
higher performance at increased current levels with minimal external circuitry;
increased noise immunity (threshold voltage at 4V); and
increased gate robustness (at +/-20V).

The Gen III drain and source PQFN88 packages include wider pins for increased board-level reliability (BLR), which increases the reliability of multi-layer printed circuit board (PCB) designs. Offering the drain and source tab configurations also accommodates both high- and low-side switch locations. This provides increased radiated immunity as the large pad is soldered to the non-switching node. Further, adding PQFN88 devices to the existing list of Gen III TO-XXX FETs gives engineers an opportunity to explore GaN-driven surface-mount applications using Transphorm’s latest technology.

“Our focus continues to be on increasing GaN FET reliability while delivering higher power density,” says Philip Zuk, VP of technical marketing worldwide & North America sales. “As market interest in high-voltage GaN technology continues to grow, we also aim to arm our customers with device options that fit each potential application. To that end, the introduction of the 72mΩ source and drain PQFN88 devices allows us to meet all three objectives as we fill out our current product family.”

The adoption rate of high-voltage GaN power electronics is on the rise, notes Transphorm, which has announced several customers with diverse end products [e.g. server and industrial power supplies, gaming PC supplies, portable solar generators, etc].

The 650V TP65H070LSG and TP65H070LDG (72mΩ) FETs are currently available for $7.47 in 1000-unit quantities. Supporting design resources include:

TP65H070L series datasheet;
TP65H070L series spice model;
1.2 kW half-bridge buck or boost evaluation kit [TDHBG1200DC100-KIT];
TP65H070L half-bridge daughter card [TDHB-65H070-DC]; and
‘Recommended External Circuitry for Transphorm GaN FETs’ app note.

Tags: Transphorm GaN-on-Si GaN HEMT Power electronics

Visit: www.transphormusa.com