Nexperia enters GaN FET market

Nexperia BV of Nijmegen, Netherlands, which manufactures discrete and MOSFET components and analog & logic ICs, has announced its entry into the gallium nitride (GaN) field-effect transistor (FET) market with the introduction of the 650V GAN063-650WSA, which has a gate-source voltage (VGS) of +/-20V, a temperature range of -55°C to +175°C, a low on-resistance (RDS(on)) of down to 60mΩ, and fast switching to offer very high efficiency.

In April 2018, Cree Inc of Durham, NC, USA signed a non-exclusive, worldwide, royalty-bearing patent license agreement that provided Nexperia with access to its GaN power device patent portfolio, addressing device structures, materials and processing improvements, and packaging technology.

Nexperia is targeting high-performance application segments including hybrid and all-electric vehicles (xEV), data centers, telecom infrastructure, industrial automation and high-end power supplies. The firm says that its GaN-on-silicon process is robust and mature with proven quality and reliability, and that it is highly scalable as wafers can be processed in existing silicon fabrication facilities. Also, the device is available in the industry-standard TO-247, allowing the benefit of GaN’s performance in a familiar package.

“This is a strategic move for Nexperia into the high-voltage area, and we can now deliver technology suitable for xEV power semiconductor applications,” says Toni Versluijs, general manager of Nexperia MOS Business Group. “Our GaN is a technology that is ready for volume production, and with scalability to meet high-volume applications,” he adds. “The automotive sector is a key focus for Nexperia and one which is forecast to grow significantly for two decades as electric vehicles replace those powered by traditional internal combustion engines as the preferred means of personal and public transport.”

The GAN063-650WSA GaN FET is the first in a portfolio of GaN devices that Nexperia is developing to address the automotive, communication infrastructure and industrial markets.

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Cree licenses GaN power device patents to Nexperia

Tags: GaN-on-Si Power electronics

Visit: www.nexperia.com