Wolfspeed presents new GaN-on-SiC and LDMOS components at IMS

In booth 842 at the IEEE’s International Microwave Symposium (IMS 2019) in Boston, MA, USA (4–6 June), Wolfspeed of Durham, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — is exhibiting a broad assortment of GaN-on-SiC and laterally diffused metal-oxide-semiconductor (LDMOS) devices, as well as introducing new products for aerospace/defense and communications infrastructure applications.

Wolfspeed is also giving live demonstrations each day including:

a broadband GaN monolithic microwave integrated circuit (MMIC) power amplifier (PA) for 32V counter improvised explosive device (C-IED) applications;
a mid-Ku-band GaN MMIC PA for satellite communications (SatCom) applications;
a 63W average, 3.6-3.8GHz high-efficiency Doherty GaN transistor for cellular base-station transmitter amplifiers;
a broadband GaN MMIC power amplifier for 28V X-band radar applications including military, marine and weather radars;
a 120W multi-stage application fixture for S-band radar; and
a troposcatter tactical radio reference design for SatCom and radio links.

The firm’s components are also be on display in other demos throughout IMS, including Mouser Electronics at booth 374, Keysight Technologies at booth 606, Maury Microwave at booth 618, National Instruments at booth 930, Richardson RFPD at booth 1150 and AMCAD Engineering at booth 1231.

Tags: Wolfspeed GaN RF

Visit: www.ims-ieee.org

Visit: www.wolfspeed.com/RF