UnitedSiC adds seven TO220-3L- and D2PAK-3L-packaged SiC FETs to 650V product portfolio

Silicon carbide (SiC) power semiconductor maker United Silicon Carbide Inc (USCi) of Monmouth Junction, NJ, USA has added seven new TO220-3L and D2PAK-3L device/package combinations to its UJ3C (general purpose) and UF3C (hard switched) series of 650V SiC field-effect transistors (FETs).

The new devices provide high-voltage power performance in the fast-growing data-center server, 5G base-station and electric vehicle (EV) markets, where they can be used in power supplies, telecom rectifiers and on-board chargers, respectively. They are targeted at designers who prefer a 3-lead, TO220 or D2PAK package option, yet are still looking to enhance power performance in power-factor correction (PFC) circuits, LLC resonant converters, and phase-shifted full-bridge converters.

Unique to UnitedSiC’s UJ3C and UF3C FET portfolio is its true ‘drop-in replacement’ functionality. Designers can significantly enhance system performance, without the need to change gate drive voltage, by replacing their existing silicon IGBTs, silicon FETs, SiC MOSFETs or silicon superjunction devices with UnitedSiC FETs.

Both series of SiC FETs are based on UnitedSiC’s unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a silicon MOSFET to produce a normally-off SiC FET device that has standard gate-drive characteristics. As a result, existing systems upgraded with the UnitedSiC ‘drop-in replacement’ FETs can expect a performance increase with lower conduction and switching losses, enhanced thermal properties and integrated gate ESD protection. In the case of new designs, the UnitedSiC FETs are said to deliver increased switching frequencies to gain substantial system benefits in both efficiency and reduction in size as well as cost of passive components such as magnetics and capacitors.

The three-leaded, industry-standard TO220-3L package offers enhanced thermal characteristics made possible by UnitedSiC’s sintered-silver packaging technology. New products available in this package include the UJ3C device with RDS(on) values of 30mΩ and 80mΩ and the UF3C device with an RDS(on) spec of 40mΩ.

The three-leaded, industry-standard D2PAK-3L targets surface-mount designs and is certified to IPC and JEDEC’s Moisture Sensitivity Level 1. New products available in this package include the UJ3C device with RDS(on) specs of 30 and 80mΩ and UF3C devices with RDS(on) specs of 30mΩ and 40mΩ.

Select devices are also available in automotive versions that meet the AEC-Q101 standard.

Dependent on RDS(on) values, prices range from $5.18 to $14.35 each for the D2PAK-3L options and from $5.18 to $13.79 each for the TO220-3L options in 1000-unit quantities. Devices are in stock at UnitedSiC franchised distributors, including Mouser and Richardson Electronics.

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UnitedSiC launches UF3C FAST silicon carbide FET series

Tags: SiC JFETs SiC power devices

Visit: www.mouser.com/usci

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