ROHM launches first AC/DC converter ICs with built-in 1700V SiC MOSFET

Power semiconductor maker ROHM of Kyoto, Japan has announced the availability of the BM2SCQ12xT-LBZ series of AC/DC converter ICs with a built-in 1700V silicon carbide (SiC) MOSFET, optimized for 400VAC industrial applications including ; lighting (e.g. street lamps), commercial AC systems and general-purpose AC servos and inverters used in high-power equipment (see Figure 1).

Figure 1. Rohm’s new BM2SCQ12xT-LBZ AC/DC converter IC with built-in 1700V SiC MOSFET.

In recent years, the growing demand for energy saving has resulted in the adoption of power semiconductors such as SiC in 400VAC industrial applications, since SiC power semiconductors deliver greater power efficiency, miniaturization and higher voltage capability than existing silicon power devices. Also, industrial equipment consists of a main power supply circuit and a built-in auxiliary power supply that supplies power to various control systems. The use of low-voltage silicon MOSFETs and insulated-gate bipolar transistors (IGBTs) limits the amount of power savings in auxiliary power supply.

In response, ROHM has aimed to develop ICs that maximize the performance of SiC power semiconductors. In 2015, it was first to offer AC/DC converter ICs for driving high-voltage, low-loss SiC MOSFETs. Now, what’s claimed to be the first AC/DC converter ICs with a built-in SiC MOSFET should further accelerate the adoption of AC/DC converters that use SiC MOSFETs in industrial equipment.

Furthermore, the BM2SCQ12xT-LBZ series integrates 1700V SiC MOSFETs, which is also reckoned to be an industry first. The series enables what are claimed to be breakthrough energy savings and facilitates efficient AC/DC converter design by resolving many of the issues encountered by designers using discrete solutions.

Figure 2.

For example, incorporating a SiC MOSFET and control circuitry optimized for auxiliary power supplies for industrial equipment in a single package can significantly reduce the number of external parts required compared with conventional designs - from 12 parts 12 components (AC/DC converter IC, 800V Si MOSFET x2, Zener diode x3, resistor x6) plus heat-sink to a single IC - see Figure 2. The high withstand voltage and voltage noise resistance of the internal SiC MOSFET also make it possible to reduce the size of components used for noise suppression.

The new product also helps in minimizing both the component failure risk and the amount of resources required to develop systems using SiC MOSFETs.

In addition, the internal SiC MOSFET and the built-in gate driver circuit optimized for it enable a 5% improvement in power efficiency over conventional silicon MOSFETs (and a 28% reduction in power loss), it is reckoned (see Figure 3). These features can translate to a dramatic reduction in size, improved reliability and superior power savings in industrial applications, the firm adds.

Figure 3.

ROHM says it is committed to developing not only power semiconductors such as SiC devices but also the ICs for controlling them, and to providing optimized solutions that contribute to greater energy savings and performance in industrial equipment.

The new product is available as samples now and in OEM quantities in May. Evaluation boards will be released later this year.

Tags: Rohm SiC power MOSFET

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