Exagan opens Power Solutions Center to extend applications support and market reach

Continuing its progress in accelerating the adoption of gallium-nitride (GaN)-on-silicon semiconductors in power markets, gallium nitride technology start-up Exagan of Grenoble and Toulouse, France (founded in 2014 with support from CEA-Leti and Soitec) has opened a new Power Solutions Center in Toulouse to extend its applications support and market reach in wide-ranging, customer-specific end products. The opening of the facility, which is operating in close collaboration with technology partner CEA Tech, follows the launch of Exagan’s first GaN applications center in Taipei, Taiwan last October.

Exagan’s new Power Solutions Center in Toulouse.

Photo: Exagan’s new Power Solutions Center in Toulouse.

The Toulouse facility provides customers with new application-development and product-validation capabilities using highly specialized electronic equipment. It also enables Exagan to master new architectures for GaN solutions while also boosting power-conversion efficiencies in current topologies.

Exagan says that its technology and products are designed to offer value in device performance, robustness and ease of integration with existing platforms. G-FET power transistors can be fabricated in existing 200mm CMOS wafer fabs, enabling a multi-source supply, easy scalability and optimal cost/performance benefits.

With its fab-lite business model, Exagan offers control of GaN technology integration from starting materials to full implementation in end products, enabling product optimization and volume manufacturing. The firm’s product portfolio covers a wide range of power levels and applications, from small fast-charging systems, data centers and onboard automotive chargers up to fast-charging stations for electric vehicles.

“Building on a robust GaN technology and product portfolio, Exagan is now deploying GaN Power Solutions Centers in Europe and Asia to work closely with customers,” says president & CEO Frédéric Dupont. “Our goal is to deliver the best functionality and value by optimizing GaN devices’ industry-leading balance of power density, power efficiency, reliability and system costs,” he adds.

The market for GaN in power electronics is projected to increase at a compound annual growth rate (CAGR) of 93% by 2023, according to market research firm Yole Développement.

Exagan is exhibiting its GaN-based product portfolio – including G-FET power transistors, G-DRIVE intelligent system-in-a-package (SiP) solutions and evaluation modules – in booth #637 (Hall 9) at PCIM Europe 2019 in Germany. Specifically, the firm is showcasing the performance of its G-FET power transistors in applications such as 65W USB PD 3.0 power chargers and power factor correction (PFC) ranging from 300W up to 1.5kW for next-generation data centers.

See related items:

Exagan forms Taiwan subsidiary

Exagan launches G-FET power transistors and G-DRIVE intelligent fast-switching products for consumer, industrial and automotive applications

Tags: GaN-on-Si GaN switching device on silicon

Visit: www.mesago.de/en/PCIM/main.htm

Visit: www.exagan.com