Transphorm awarded $15.9m contract modification to develop US-based production of GaN epi for high-performance RF and mmW electronics

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified high-voltage (HV) gallium nitride (GaN) field-effect transistors (FETs) for high-voltage (HV) power conversion applications — has been awarded $15,869,322 for a modification (P00002) to a previously awarded cost-plus-fixed-price contract (N68335-19-C-0107) to exercise an option.

The option modification procures the continued services and materials necessary to conduct R&D for a US-based dedicated production source of gallium nitride (GaN) epitaxy for high-performance radio-frequency and millimeter-wave (mmW) electronics.

Work will be performed in Goleta, and is expected to be completed in June 2022. Fiscal 2019 Department of Defense funds of $10m for research, development, test and evaluation will be obligated at the time of award, none of which will expire at the end of the current fiscal year. The Naval Air Warfare Center Aircraft Division in Lakehurst, NJ (NAWCAD Lakehurst) is the contracting activity.

Tags: Transphorm GaN-on-Si GaN HEMT Power electronics

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